2DB1713-13 Datasheet 2DB1713-13 | P1-P3

2DB1713

Document number: DS31634 Rev. 2 - 2

1 of 4

www.diodes.com

December 2008

2DB1713

NEW PRODUCT

LOW V

CE(SAT)

PNP SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Complementary NPN Type Available (2DD2678)

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT89-3L

• Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.072 grams (approximate)

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

-15 V

Collector-Emitter Voltage

V

CEO

-12 V

Emitter-Base Voltage

V

EBO

-6 V

Peak Pulse Current

I

CM

-6 A

Continuous Collector Current

I

C

-3 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ T

A

= 25°C P

D

0.9 W

Thermal Resistance, Junction to Ambient Air (Note 3) @ T

A

= 25°C

R

θ

JA

139 °C/W

Power Dissipation (Note 4) @ T

A

= 25°C P

D

2 W

Thermal Resistance, Junction to Ambient Air (Note 4) @ T

A

= 25°C

R

θ

JA

62.5 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150 °C

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Conditions

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

V

(

BR

)

CBO

-15

⎯ ⎯

V

I

C

= -10μA, I

E

= 0

Collector-Emitter Breakdown Voltage (Note 5)

V

(

BR

)

CEO

-12

⎯ ⎯

V

I

C

= -1mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(

BR

)

EBO

-6

⎯ ⎯

V

I

E

= -10μA, I

C

= 0

Collector Cut-Off Current

I

CBO

⎯ ⎯

-0.1

μA

V

CB

= -15V, I

E

= 0

Emitter Cut-Off Current

I

EBO

⎯ ⎯

-0.1

μA

V

EB

= -6V, I

C

= 0

ON CHARACTERISTICS (Note 5)

Collector-Emitter Saturation Voltage

V

CE

(

SAT

)

⎯

-120 -250 mV

I

C

= -1.5A, I

B

= -30mA

DC Current Gain

h

FE

270

⎯

680

⎯ V

CE

= -2V, I

C

= -500mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

obo

⎯

40

⎯

pF

V

CB

= -10V, I

E

= 0,

f = 1MHz

Current Gain-Bandwidth Product

f

T

⎯

180

⎯

MHz

V

CE

= -2V, I

C

= -100mA,

f = 100MHz

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Device mounted on FR-4 PCB with 1 inch

2

copper pad layout.

5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

Top View

Device Schematic

Pin Out Configuration

3

1

2,4

C

O

L

E

C

T

O

R

E

M

I

T

E

R

B

A

S

E

4

3

2

1

C

B

E

T

O

P

V

I

E

W

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2DB1713

Document number: DS31634 Rev. 2 - 2

2 of 4

www.diodes.com

December 2008

2DB1713

NEW PRODUCT

0

P , POWER DISSIPATION (W)

D

T , AMBIENT TEMPERATURE ( C)

A

°

Note 3

Fig. 1 Power Dissipation vs. Ambient Temperature

0.4

0.8

1.2

1.6

2.0

25 50 75 100 125 150

Note 4

0

0.5

1.0

1.5

2.0

2.5

3.0

012345

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage

-I ,

C

O

LLE

C

T

O

R

C

U

R

EN

T

(A)

C

I = -1mA

B

I = -2mA

B

I = -3mA

B

I = -4mA

B

I = -5mA

B

1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 3 Typical DC Current Gain vs. Collector Current

10

100

10,000

h, D

C

U

R

E

N

T

G

AI

N

FE

1,000

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = -2V

CE

1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

0.001

0.01

0.1

1

-V ,

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURATION

CE(SAT)

VOLTAGE (V)

I/I = 20

CB

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

0

0.2

0.4

0.6

0.8

1.0

1.2

-V , BASE-EMI

T

E

R

T

U

R

N-

O

N V

O

L

T

A

G

E (V)

BE(ON)

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = -2V

CE

1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

0.2

0.4

0.6

0.8

1.0

1.2

-V , BASE-EMI

T

E

R

SA

T

U

R

A

T

I

O

N

V

O

L

T

A

G

E (V)

BE(SAT)

0

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

I = 20

CB

/I

2DB1713

Document number: DS31634 Rev. 2 - 2

3 of 4

www.diodes.com

December 2008

2DB1713

NEW PRODUCT

0.1 1 10 100

V , REVERSE VOLTAGE (V)

R

Fig. 7 Typical Capacitance Characteristics

10

100

1,000

C

A

P

A

C

I

T

AN

C

E (p

F

)

C

ibo

C

obo

f = 1MHz

0102030405060708090100

-I , COLLECTOR CURRENT (mA)

C

Fig. 8 Typical Gain-Bandwidth Product

vs. Collector Current

1

10

100

1,000

f,

G

AIN-BANDWID

T

H

P

R

O

D

U

C

T

(M

H

z)

T

V = -2V

f = 100MHz

CE

Ordering Information (Note 6)

Part Number Case Packaging

2DB1713-13 SOT89-3L 2500/Tape & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Package Outline Dimensions

SOT89-3L

Dim Min Max Typ

A 1.40 1.60 1.50

B 0.45 0.55 0.50

B1 0.37 0.47 0.42

C 0.35 0.43 0.38

D 4.40 4.60 4.50

D1 1.50 1.70 1.60

E 2.40 2.60 2.50

e — — 1.50

H 3.95 4.25 4.10

L 0.90 1.20 1.05

All Dimensions in mm

1713 = Product Type Marking Code

YWW = Date Code Marking

Y = Last digit of year (ex: 8 = 2008)

WW = Week code 01 - 52

e

D

H

L

A

C

E

8

°

(

4

X

)

B1

B

D1

R

0

.

2

0

1713

YWW

2DB1713-13

2DB1713-13

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