SQJ942EP
www.vishay.com
Vishay Siliconix
S13-0708-Rev. B, 01-Apr-13
2
Document Number: 62669
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA N-Ch 1 40 - -
V
V
GS
= 0 V, I
D
= 250 μA N-Ch 2 40 - -
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA N-Ch 1 1.3 1.8 2.3
V
DS
= V
GS
, I
D
= 250 μA N-Ch 2 1.3 1.8 2.3
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
N-Ch 1 - - ± 100
nA
N-Ch 2 - - ± 100
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
40 V N-Ch 1 - - 1
μA
V
GS
= 0 V V
DS
= - 40 V N-Ch 2 - - 1
V
GS
= 0 V V
DS
= 40 V, T
J
= 125 °C N-Ch 1 - - 50
V
GS
= 0 V V
DS
= 40 V, T
J
= 125 °C N-Ch 2 - - 50
V
GS
= 0 V V
DS
= 40 V, T
J
= 175 °C N-Ch 1 - - 150
V
GS
= 0 V V
DS
= 40 V, T
J
= 175 °C N-Ch 2 - - 150
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V N-Ch 1 30 - -
A
V
GS
= 10 V V
DS
5 V N-Ch 2 30 - -
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 7.8 A N-Ch 1 - 0.018 0.022
V
GS
= 10 V I
D
= 10.1 A N-Ch 2 - 0.009 0.011
V
GS
= 10 V I
D
= 7.8 A, T
J
= 125 °C N-Ch 1 - - 0.032
V
GS
= 10 V I
D
= 10.1 A, T
J
= 125 °C N-Ch 2 - - 0.017
V
GS
= 10 V I
D
= 7.8 A, T
J
= 175 °C N-Ch 1 - - 0.038
V
GS
= 10 V I
D
= 10.1 A, T
J
= 175 °C N-Ch 2 - - 0.020
V
GS
= 4.5 V I
D
= 7.1 A N-Ch 1 - 0.022 0.026
V
GS
= 4.5 V I
D
= 9.3 A N-Ch 2 - 0.011 0.013
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 7.8 A N-Ch 1 - 46 -
S
V
DS
= 15 V, I
D
= 10.1 A N-Ch 2 - 73 -
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 20 V, f = 1 MHz N-Ch 1 - 647 809
pF
V
GS
= 0 V V
DS
= 20 V, f = 1 MHz N-Ch 2 - 1161 1451
Output Capacitance C
oss
V
GS
= 0 V V
DS
= 20 V, f = 1 MHz N-Ch 1 - 105 131
V
GS
= 0 V V
DS
= 20 V, f = 1 MHz N-Ch 2 - 178 222
Reverse Transfer Capacitance C
rss
V
GS
= 0 V V
DS
= 20 V, f = 1 MHz N-Ch 1 - 42 53
V
GS
= 0 V V
DS
= 20 V, f = 1 MHz N-Ch 2 - 68 85
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 20 V, I
D
= 16 A N-Ch 1 - 13.1 19.7
nC
V
GS
= 10 V V
DS
= 20 V, I
D
= 6 A N-Ch 2 - 22.5 33.8
Gate-Source Charge
c
Q
gs
V
GS
= 10 V V
DS
= 20 V, I
D
= 16 A N-Ch 1 - 2.12 -
V
GS
= 10 V V
DS
= 20 V, I
D
= 6 A N-Ch 2 - 3.35 -
Gate-Drain Charge
c
Q
gd
V
GS
= 10 V V
DS
= 20 V, I
D
= 16 A N-Ch 1 - 1.84 -
V
GS
= 10 V V
DS
= 20 V, I
D
= 6 A N-Ch 2 - 3.14 -
Gate Resistance R
g
f = 1 MHz
N-Ch 1 1.5 3.02 5
N-Ch 2 2.05 4.11 7
