9/13
BAxxJC5 Series(Fixed) BA00JC5WT(Variable)
Datasheet
TSZ02201-0R6R0A600140-1-2
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
14.Feb.2012 Rev.001
Refer to the above and implement proper thermal designs so that the IC will not be used under excessive power dissipation
conditions under the entire operating temperature range.
The power consumption Pc of the IC in the event of shorting (i.e. the Vo and GND pins are shorted) can be obtained from
the following equation: Pc = Vcc × (Icca + Ishort) (Ishort: short current)
●Peripheral Circuit Considerations
• Vcc pin
Insert a capacitor (0.33 μF approx.) between V
CC
and GND.
The capacitance will vary depending on the application.
Use a suitable capacitance and implement designs with sufficient margins.
• GND pin
Verify that there is no potential difference between the ground of the application board and the IC.
If there is a potential difference, the set voltage will not be output accurately, resulting in unstable IC operation.
Therefore, lower the impedance by designing the ground pattern as wide and as short as possible.
• CTL terminal
The CTL terminal turns on at an operating power supply voltage of 2.0 V or higher and turns off at 0.8 V or lower.
There is no particular order when turning the power supply and CTL terminals on or off.
Fig.18 Input Equivalent Circuit
●Vo Terminal
Insert a capacitor between the Vo and GND pins in order to prevent output oscillation.
Fig.19 Output Equivalent Circuit Fig.20 IO vs. ESR
The capacitance may vary greatly with temperature changes, thus making it impossible to completely prevent oscillation.
Therefore, use a tantalum aluminum electrolytic capacitor with a low ESR (Equivalent Serial Resistance). The output will
oscillate if the ESR is too high or too low, so refer to the ESR characteristics in Fig.20 and operate the IC within the stable
region. Use a capacitor within a capacitance between 22μF and 1,000μF.
OUT
22 μF
IC
200 400 600 800 10000
0.05
0.075
0.1
0.2
0.5
1.0
2.0
Io [mA]
ESR [Ω]
Oscillation region
Oscillation region
Stable region
10.0
31
2 k
Ω
27 k
Ω
CTL
