IS61C64AL ISSI
®
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
10/23/06
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10 -12
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
I
CC1 VDD Operating VDD = Max., CE = VIL Com. — 20 — 20 mA
Supply Current IOUT = 0 mA, f = 0 Ind. — 25 — 25
I
CC2 VDD Dynamic Operating VDD = Max., CE = VIL Com. — 45 — 35 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — 50 — 45
typ.
(2)
25 25
ISB1 TTL Standby Current VDD = Max., Com. — 1 — 1 mA
(TTL Inputs) VIN = VIH or VIL Ind. — 2 — 2
CE
≥
V IH, f = 0
I
SB2 CMOS Standby VDD = Max., Com. — 350 — 350 µA
Current (CMOS Inputs) CE
≥
V DD – 0.2V, Ind. — 450 — 450
V
IN
≥
V DD – 0.2V, or typ.
(2)
200 200
VIN
≤
0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD = 5V, TA = 25
o
C. Not 100% tested.
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 8 pF
COUT Output Capacitance VOUT = 0V 10 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A = 25°C, f = 1 MHz, VDD = 5.0V.