CNY75B

www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83536
254 Rev. 2.0, 28-Oct-09
CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
DESCRIPTION
The CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB,
CNY75GC consists of a phototransistor optically coupled to
a gallium arsenide infrared-emitting diode in a 6 pin plastic
dual inline package.
AGENCY APPROVALS
UL1577, file no. E52744, double protection
BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950
(BS 7002), pending
DIN EN 60747-5-5 (VDE 0884)
FIMKO (SETI): EN 60950, certificate no. FI25155
FEATURES
Isolation materials according to UL 94-VO
Pollution degree 2 (DIN/VDE 0110/resp.
IEC 60664)
Climatic classification 55/110/21 (IEC 60068
part 1)
Low temperature coefficient of CTR
CTR offered in 3 groups
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
(848 V peak)
Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
Rated impulse voltage (transient overvoltage)
V
IOTM
= 6 kV
peak
Isolation test voltage (partial discharge test voltage)
V
pd
= 1.6 kV
Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI 325
Thickness through insulation 0.4 mm
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
Switch-mode power supplies
Line receiver
Computer peripheral interface
Microprocessor system interface
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage 300 V
- for appl. class I - III at mains voltage 600 V
according to DIN EN 60747-5-5 (VDE 0884)
Note
(1)
G = leadform 10.16 mm; G is not marked on the body.
C
E
B
18537_5
231
546
NCC (-)A (+)
V
DE
17201_4
ORDER INFORMATION
(1)
PART REMARKS
CNY75A CTR 63 % to 125 %, DIP-6
CNY75B CTR 100 % to 200 %, DIP-6
CNY75C CTR 160 % to 320 %, DIP-6
CNY75GA CTR 63 % to 125 %, DIP-6, 400 mil
CNY75GB CTR 100 % to 200 %, DIP-6, 400 mil
CNY75GC CTR 160 % to 320 %, DIP-6, 400 mil
Document Number: 83536 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 2.0, 28-Oct-09 255
CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
Optocoupler, Phototransistor Output,
with Base Connection
Vishay Semiconductors
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices.
Note
(1)
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
5V
Forward current I
F
60 mA
Forward surge current t
p
10 µs I
FSM
3A
Power dissipation P
diss
70 mW
Junction temperature T
j
125 °C
OUTPUT
Collector base voltage V
CBO
70 V
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
10 ms I
CM
100 mA
Power dissipation P
diss
70 mW
Junction temperature T
j
125 °C
COUPLER
AC isolation test voltage (RMS) V
ISO
5000 V
RMS
Total power dissipation P
tot
200 mW
Ambient temperature range T
amb
- 55 to + 110 °C
Storage temperature range T
stg
- 55 to + 125 °C
Soldering temperature
(2)
2 mm from case, t 10 s T
sld
260 °C
ELECTRICAL CHARACTERISTCS
(1)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 50 mA V
F
1.25 1.6 V
Reverse current V
R
= 6 V I
R
10 µA
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
50 pF
OUTPUT
Collector base voltage I
C
= 100 µA V
CBO
70 V
Collector emitter voltage I
C
= 1 mA V
CEO
70 V
Emitter collector voltage I
E
= 100 µA V
ECO
7V
Collector emitter leakage current V
CE
= 20 V, I
F
= 0 A I
CEO
150 nA
COUPLER
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 1 mA V
CEsat
0.3 V
Cut-off frequency
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100 Ω
f
c
110 kHz
Coupling capacitance f = 1 MHz C
k
0.6 pF
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83536
256 Rev. 2.0, 28-Oct-09
CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 5 V, I
F
= 1 mA
CNY75GA CTR 15 %
CNY75GB CTR 30 %
CNY75GC CTR 60 %
V
CE
= 5 V, I
F
= 10 mA
CNY75GA CTR 63 125 %
CNY75GB CTR 100 200 %
CNY75GC CTR 160 320 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Current time V
CC
= 5 V, R
L
= 100 Ω
CNY75GA I
F
10 mA
CNY75GB I
F
10 mA
CNY75GC I
F
10 mA
Delay time V
CC
= 5 V, R
L
= 100 Ω
CNY75GA t
d
s
CNY75GB t
d
2.5 µs
CNY75GC t
d
2.8 µs
Rise time V
CC
= 5 V, R
L
= 100 Ω
CNY75GA t
r
2.5 µs
CNY75GB t
r
s
CNY75GC t
r
4.2 µs
Fall time V
CC
= 5 V, R
L
= 100 Ω
CNY75GA t
f
2.7 µs
CNY75GB t
f
3.7 µs
CNY75GC t
f
4.7 µs
Storage time V
CC
= 5 V, R
L
= 100 Ω
CNY75GA t
s
0.3 µs
CNY75GB t
s
0.3 µs
CNY75GC t
s
0.3 µs
Turn-on time V
CC
= 5 V, R
L
= 100 Ω
CNY75GA t
on
4.5 µs
CNY75GB t
on
5.5 µs
CNY75GC t
on
s
Turn-off time V
CC
= 5 V, R
L
= 100 Ω
CNY75GA t
off
s
CNY75GB t
off
s
CNY75GC t
off
s
Turn-on time V
CC
= 5 V, R
L
= 1 kΩ
CNY75GA t
on
10 µs
CNY75GB t
on
16.5 µs
CNY75GC t
on
11 µs
Turn-off time V
CC
= 5 V, R
L
= 1 kΩ
CNY75GA t
off
25 µs
CNY75GB t
off
20 µs
CNY75GC t
off
37.5 µs

CNY75B

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Single CTR 100-200%
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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