SB5100E-G

Low VF/ESD Leaded Schottky Barrier Rectifiers
MDS0906005A
Page 1
SB520E-G thru SB5100E-G
Voltage Range: 20 to 100 V
Current:
5.0 A
"-G" : RoHS Device
• Case: Molded plastic body DO-201AD
• Epoxy: UL94-V0 rated flame retardant
• Terminals: Solderable per MIL-STD-750 Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
• Weight: 0.04 ounces, 1.12 grams
• Low drop down voltage
• 5.0A operation at TA=75°C with no thermal runaway
• For use in low voltage, high frequency invertors free
wheeling and polarity protection
• Silicon epitaxial planar chips
• Electrostatic discharge (ESD) test under IEC61000-4-2
standard: >15KV (air) & 8KV (contact)
• Lead-free part, meet RoHS requirements
FEATURES
MECHANICAL DATA
Unit :inch(mm)
DO-201AD
1.0(25.4) Min.
1.0(25.4) Min.
.375(9 .5 )
.287(7 .3 )
.210(5.3)
.189(4.8)
.052(1.3)
.048(1.2)
Symbols 520E 540E 545E 550E 560E 580E 5100E Units
Maximum Recurrent Peak Reverse Voltage VRRM 20 40 45 50 60 80 100 Volts
Maximum RMS Voltage VRMS 14 28 30 35 42 56 70 Volts
Maximum DC Blocking Voltage VDC 20 40 45 50 60 80 100 Volts
Maximum Average Forward Rectified Current
0.5” (12.7mm) lead length at TA=75°C, See Figure 1
Peak Forward Surge Current
8.3mS single half sine-wave superimp osed on IFSM 150 125 Amps
rated load (JEDEC Method) TL=110°C
Maximum Forward Voltage at 5.0A (Note 1) VF 0.55 0.70 0.85 Volts
Maximum DC Reverse Current TA= 25°C
at Rated DC Blocking Voltage TA=100°C
Typical Junction Capacitance (Note 2) CJ 500 pF
Typical Thermal Resistance (Note 3) RθJA 35.0
RθJL 15.0
Operating Junction Temperature Range TJ -65 ~ +125 -65 ~ +150 °C
Storage Temperature Range TSTG -65 ~ +150 °C
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
IAV 5.0 Amps
IR mA
°C/W
0.5
50 30
Note 1. Pulse test: 300µS pulse width, 1% duty cycle
2. Me asured at 1.0MHz an d applied reverse vo ltage of 4.0 Volts
3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted 0. 500” (12.7mm ) lead length with 2. 5x2.5” (63.5x63.5mm ) copper
pad.
MDS0906005A
Page 2
Low VF/ESD Leaded Schottky Barrier Rectifiers
RATINGS AND CHARACTERISTIC CURVES SB520E-G thru SB5100E-G
Reverse Voltage (Volts)
Percent of Rated Peak Reverse Voltage ( %)
Fig. 3 - Typical Instantaneour Forward
Characteristics
Fig. 4A - Typical Reverse Characteristics
Instantaneous Forward Voltage (Volts)
Instantaneous Forward Current (A)
Instantaneous Reverse Current (mA)
Fig. 5 - Typical Junction Capacitance
0.1 1.0 10 100
Junction Capacitance (pF)
1,000
10,000
Fig. 4B - Typeical Reverse Characteristic
100
TJ=25°C
f=1.0MHz
Vsig=50mVp-p
Instantaneous Reverse Current (uA)
Percent of Rated Peak Reverse Voltage ( %)
TJ=25°C
TJ=100°C
SB520E - SB545E
0 20 40 60 80 100 120 140
100
10
1.0
0.1
0.01
0.001
Fig.1 - Forward Current Derating Curve
Average Forward Current (A)
0 25 50 75 100 125 150 175
Lead Temperature ( °C)
6.0
5.0
4.0
3.0
2.0
1.0
SB520E - SB545E
SB550E - SB5100E
single phase half wave 60Hz
resistive or inductive load
3.75(9.5mm) lead length
1 10 100
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
200
150
100
50
0
SB520E - SB545E
SB550E - SB5100E
TL=110°C
8.3mS single half sine-wave
(JEDEC Method)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
50
10
1
0.1
0.01
SB520E - SB545E
SB550E - SB560E
SB580E - SB5100E
TJ=125°C
SB550E - SB5100E
TJ=25°C
TJ=75°C
TJ=125°C
2
10
1
10
3
10
4
10
5
10
1
0 20 40 60 80 100
TJ=150°C

SB5100E-G

Mfr. #:
Manufacturer:
Comchip Technology
Description:
Schottky Diodes & Rectifiers Low VF ESD 5A 100V Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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