NCP1601A, NCP1601B
http://onsemi.com
4
MAXIMUM RATINGS
Rating Symbol Value Unit
FB, V
control
, Ramp, CS, Osc Pins (Pins 1--5)
Maximum Voltage Range
Maximum Current
V
max
I
max
--0.3to+9
100
V
mA
Drive Output (Pin 7)
Maximum Voltage Range
Maximum Current Range (Note 2)
V
max
I
max
--0.3to+18
--500 to +750
V
mA
Power Supply Voltage (Pin 8)
Maximum Voltage Range
Maximum Current
V
max
I
max
--0.3to+18
100
V
mA
Power Dissipation and Thermal Characteristics
P suffix, Plastic Package, Case 626
Maximum Power Dissipation @ T
A
=70 C
Thermal Resistance, Junction--to--Air
D suffix, Plastic Package, Case 751
Maximum Power Dissipation @ T
A
=70 C
Thermal Resistance, Junction--to--Air
P
D
R
θ
JA
P
D
R
θ
JA
800
100
450
178
mW
C/W
mW
C/W
Operating Junction Temperature Range T
J
--40 to +125 C
Storage Temperature Range T
stg
--65 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
A. This device series contains ESD protection and exceeds the following tests:
Pins 1--8: Human Body Model 2000 V per MIL--STD--883, Method 3015.
Machine Model Method 200 V.
B. This device contains Latchup protection and exceeds 100 mA per JEDEC Standard JESD78.
1. Guaranteed by design.
NCP1601A, NCP1601B
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS (For typical values T
J
=25C. For min/max values, T
J
=--40C to +125C, V
CC
=15V,
V
control
= 100 nF, Ramp = 100 pF, Osc = 220 pF unless otherwise specified)
Characteristic
Pin Sy mbol Min Typ Max Unit
OSCILLATOR
Oscillator Frequency (Osc = 220 pF to GND)
5 f
osc
52 58 64 kHz
Internal Capacitance of the Oscillator Pin 5 C
osc(int)
-- 36 -- pF
Maximum Oscillator Switching Frequency 5 f
osc(max)
-- 405 -- kHz
Oscillator Discharge Current (Osc = 5.5 V) 5 I
odch
40 49 60 mA
Oscillator Charge Current (Osc = 3 V) 5 I
och
40 45 60 mA
Comparator Lower Threshold (Osc = 220 pF to GND) (Note 3) 5 V
sync(L)
3.0 3.5 4.0 V
Comparator Upper Threshold (Osc = 220 pF to GND) 5 V
sync(H)
4.5 5 5.5 V
Synchronization Pulse Width for Detection 5 t
sync(min)
500 -- -- ns
Synchronization Propagation Delay 5 t
sync(d)
-- 371 -- ns
GATE DRIVE
Gate Drive Resistor
Output High and Draw 100 mA out of Drv Pin (I
source
= 100 mA)
Output Low and Insert 100 mA into Drv Pin (I
sink
= 100 mA)
7
R
OH
R
OL
5
2
11.6
7.2
20
18
Ω
Ω
GateDriveRiseTimefrom1.5Vto13.5V(Drv=1nFtoGND) 7 t
r
-- 53 -- ns
Gate Drive Fall Time from 13.5 V to 1.5 V (Drv = 1 nF to GND) 7 t
f
-- 32 -- ns
FEEDBACK / OVERVOLTAGE PROTECTION / UNDERVOLTAGE PROTECTION
Reference Current
1 I
ref
192 203 208 mA
Regulation Block Ratio 1 I
regL
/I
ref
95 96 97 %
V
control
Pin Internal Resistor 2 R
control
-- 300 -- kΩ
Maximum Control V oltage (I
FB
= 100 mA) 2 V
control(max)
0.95 1.05 1.15 V
Feedback Pin Voltage (I
FB
= 100 mA) 1 V
FB1
-- 3 -- V
Overvoltage Protection Current Ratio 1 I
OVP
/I
ref
104 107 -- %
Overvoltage Protection Current 1 I
OVP
-- 217 225 mA
Undervoltage Protection Current Ratio 1 I
UVP
/I
ref
4 8 15 %
CURRENT SENSE
Current Sense Pin Offset Voltage (I
S
= 100 mA) 4 V
S
-- 4 -- mV
Overcurrent Protection Level 4 I
S(OCP)
190 203 210 mA
Current Sense Pin Offset Voltage at Overcurrent Level 4 V
S(OCP)
0 3.2 20 mV
Zero Current Detection Level 4 I
S(ZCD)
9 14 19 mA
Current Sense Pin Offset Voltage at Zero Current Level 4 V
S(ZCD)
0 7.5 20 mV
Zero Current Sense Resistor (R
S(ZCD)
=V
S(ZCD)
/I
S(ZCD)
) 4 R
S(ZCD)
-- 0.536 1 kΩ
RAMP
Charging Current (Ramp = 0 V)
3 I
ch
95 100 105 mA
Maximum Power Resistance (R
power
=V
control(max)
/I
ch
) 3 R
power
9.5 10.5 11.5 k Ω
Internal Clamping of Voltage V
ton
-- V
ton(max)
-- 3.9 -- V
Internal Capacitance of the Ramp Pin 3 C
ramp(int)
-- 20 -- pF
Ramp Pin Sink Resistance (Osc = 0 V, Ramp = 1 mA sourcing) 3 R
ramp
-- 71.5 -- Ω
THERMAL SHUTDOWN
Thermal Shutdown Threshold (Note 4)
-- T
SD
140 -- -- C
Thermal Shutdown Hysteresis -- T
H
-- 45 -- C
2. Comparator lower threshold is also the synchronization threshold.
3. Guaranteed by design.
NCP1601A, NCP1601B
http://onsemi.com
6
ELECTRICAL CHARACTERISTICS (For typical values T
J
=25C. For min/max values, T
J
=--40C to +125C, V
CC
=15V,
V
control
= 100 nF, Ramp = 100 pF, Osc = 220 pF unless otherwise specified)
Characteristic UnitMaxTypMinSymbolPin
SUPPLY SECTION
Startup Threshold (UVLO) NCP1601A
Startup Threshold (UVLO) NCP1601B
8 V
CC(on)
12.5
9.6
13.75
10.5
15
11.4
V
V
Minimum V oltage for Operation After Turn--On 8 V
CC(off)
8.25 9 9.75 V
UVLO Hysteresis NCP1601A
UVLO Hysteresis NCP1601B
8 V
CC(H)
4
1
4.75
1.5
--
--
V
V
Power Supply Current:
Startup (V
CC
=V
CC(on)
–0.2V)
Operating (V
CC
= 15 V, Drv = open, Osc = 220 pF)
Operating (V
CC
= 15 V, Drv = 1 nF to GND, Osc = 220 pF)
Shutdown (V
CC
=15V,I
FB
=0A)
8
I
stup
I
CC1
I
CC2
I
stdn
--
--
--
--
17
2.7
3.7
24
40
5
5
50
mA
mA
mA
mA
TYPICAL CHARACTERISTICS
f
OSC
, OSCILLATOR FREQUENCY (kHz)
Figure 3. Oscillator Frequency vs. Temperature
T
J
, JUNCTION TEMPERATURE (C)
50
51
52
53
54
55
56
-- 5 0
0 25 50 75 100 125
Figure 4. Oscillator Charge and Discharge
Current vs. Temperature
Figure 5. Oscillator Comparator Thresholds
vs. Temperature
Figure 6. Drive Output Resistance vs.
Temperature
-- 2 5
57
58
59
60
OSCILLATOR CHARGE & DISCHARGE
CURRENT (mA)
T
J
, JUNCTION TEMPERATURE (C)
44
45
46
47
48
49
50
-- 5 0
0 25 50 75 100 125
-- 2 5
51
C
OSC
= 220 pF
I
odch
osc pin = 5.5 V
I
och
osc pin = 3 V
OSCILLATOR COMPARATOR
THRESHOLDS (V)
T
J
, JUNCTION TEMPERATURE (C)
3
3.5
4.0
4.5
-- 5 0
0 25 50 75 100 125
-- 2 5
5.0
5.5
GATE DRIVE RESISTANCE (Ω)
T
J
, JUNCTION TEMPERATURE (C)
0
2
4
6
8
10
12
-- 5 0
0 25 50 75 100 125
-- 2 5
14
C
OSC
= 220 pF
R
OH
V
sync(H)
V
sync(L)
16
18
R
OL

NCP1601BPG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC PFC CTRLR CRM/TRANSITION 8DIP
Lifecycle:
New from this manufacturer.
Delivery:
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