RMLV1616A Series
R10DS0258EJ0100 Rev.1.00 Page 7 of 14
2016.01.06
Write Cycle
Parameter Symbol Min. Max. Unit Note
Write cycle time t
WC
55 ns
Address valid to write end t
AW
35 ns
Chip select to write end t
CW
35 ns
Write pulse width t
WP
35 ns 16
LB#,UB# valid to write end t
BW
35 ns
Address setup time to write start t
AS
0 ns
Write recovery time from write end t
WR
0 ns
Data to write time overlap t
DW
25 ns
Data hold from write end t
DH
0 ns
Output enable from write end t
OW
5 ns 17
Output disable to output in high-Z t
OHZ
0 18 ns 17,18
Write to output in high-Z t
WHZ
0 18 ns 17,18
Note 16. t
WP
is the interval between write start and write end.
A write starts when all of (CS1#), (CS2), (WE#) and (one or both of LB# and UB#) become active.
A write is performed during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#.
A write ends when any of (CS1#), (CS2), (WE#) or (one or both of LB# and UB#) becomes inactive.
17. This parameter is sampled and not 100% tested.
18. t
OHZ
and t
WHZ
are defined as the time when the DQ pins enter a high-impedance state and are not referred to
the DQ levels.
BYTE# Timing Conditions (BYTE# pin supported by only 48pin TSOP (I) and 52pin µTSOP (II) types)
Parameter Symbol Min. Max. Unit Note
Byte setup time t
BS
5 - ms
Byte recovery time t
BR
5 - ms
BYTE# Timing Waveforms
CS2
BYTE#
t
BS
t
BR
CS1#
RMLV1616A Series
R10DS0258EJ0100 Rev.1.00 Page 8 of 14
2016.01.06
Timing Waveforms
Read Cycle
*19
Note 19. BYTE# pin supported by only 48pin TSOP (I) and 52pin µTSOP (II) types.
BYTE# Vcc - 0.2V (Word mode) or BYTE# 0.2V (Byte mode)
20. t
CHZ1
, t
CHZ2
, t
BHZ
and t
OHZ
are defined as the time when the DQ pins enter a high-impedance state and are not
referred to the DQ levels.
21. This parameter is sampled and not 100% tested.
22. At any given temperature and voltage condition, t
CHZ1
max is less than t
CLZ1
min, t
CHZ2
max is
less than t
CLZ2
min, t
BHZ
max is less than t
BLZ
min, and t
OHZ
max is less than t
OLZ
min, for any device.
t
AA
CS1#
t
OH
t
CLZ1
t
ACS1
t
OE
t
OLZ
t
CHZ1
OE#
WE#
V
IH
t
OHZ
WE# = “H” level
t
RC
t
BLZ
t
BHZ
LB#,UB#
t
BA
CS2
t
ACS2
t
CLZ2
t
CHZ2
High impedance
Valid Data
*21,22
*21,22
*21,22
*21,22
*20,21,22
*20,21,22
*20,21,22
*20,21,22
Valid address
A
0~19
A
-1~19
(Word Mode)
(Byte Mode)
DQ
0~15
DQ
0~7
(Word Mode)
(Byte Mode)
RMLV1616A Series
R10DS0258EJ0100 Rev.1.00 Page 9 of 14
2016.01.06
Write Cycle (1)
*23
(WE# CLOCK, OE#=”H” while writing)
Note 23. BYTE# pin supported by only 48pin TSOP (I) and 52pin µTSOP (II) types.
BYTE# Vcc - 0.2V (Word mode) or BYTE# 0.2V (Byte mode)
24. t
WP
is the interval between write start and write end.
A write starts when all of (CS1#), (CS2), (WE#) and (one or both of LB# and UB#) become active.
A write is performed during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#.
A write ends when any of (CS1#), (CS2), (WE#) or (one or both of LB# and UB#) becomes inactive.
25. t
OHZ
and t
WHZ
are defined as the time when the DQ pins enter a high-impedance state and are not referred to
the DQ levels.
26. This parameter is sampled and not 100% tested.
27. During this period, DQ pins are in the output state so input signals must not be applied to the DQ pins.
CS1#
t
CW
t
WHZ
OE#
WE#
t
DH
t
WC
LB#,UB#
t
BW
CS2
t
CW
Valid address
t
WR
t
AW
t
AS
t
WP
t
DW
*24
*25,26
*25,26
t
OHZ
Valid Data
*27
A
0~19
A
-1~19
(Word Mode)
(Byte Mode)
DQ
0~15
DQ
0~7
(Word Mode)
(Byte Mode)

RMLV1616AGSA-5S2#AA0

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
SRAM SRAM 16MB 3V X16 TSOP48 55NS -40TO85C
Lifecycle:
New from this manufacturer.
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