FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D 100% R
g
Tested
APPLICATIONS
D High-Side Synchronous Buck DC/DC
Conversion
− Desktop
− Server
SUD50N02-09P
Vishay Siliconix
Document Number: 72034
S-41168—Rev. C, 14-Jun-04
www.vishay.com
1
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V) r
DS(on)
(W) I
D
(A)
a
0.0095 @ V
GS
= 10 V 20
20
0.017 @ V
GS
= 4.5 V 15
D
G
S
N-Channel MOSFET
TO-252
SGD
Top View
Drain Connected to Tab
Ordering Information: SUD50N02-09P
SUD50N02-09P—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
20
Gate-Source Voltage V
GS
"20
V
Continuous Drain Current
a
T
A
= 25_C
20
Continuous Drain Current
a
T
C
= 100_C
I
D
14
Pulsed Drain Current I
DM
100
A
Continuous Source Current (Diode Conduction)
a
I
S
4.3
Avalanche Current
I
AS
29
Single Pulse Avalanche Energy
L = 0.1 mH
E
AS
42 mJ
Maximum Power Dissipation
T
A
= 25_C
6.5
a
Maximum Power Dissipation
T
C
= 25_C
P
D
39.5
W
Operating Junction and Storage Temperature Range T
J
, T
stg
−55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction to Ambient
a
t v 10 sec
19 23
Maximum Junction-to-Ambient
a
Steady State
R
thJA
40 50
_C/W
Maximum Junction-to-Case R
thJC
3.1 3.8
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package