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HGTD3N60C3S9A

P1-P3P4-P6P7-P7
©2001 Fairchild Semiconductor Corporation HGTD3N60C3S, HGTP3N60C3 Rev. B
HGTD3N60C3S, HGTP3N60C3
6A, 600V, UFS Series N-Channel IGBTs
The HGTD3N60C3S and the HGTP3N60C3 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
o
C
and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49113.
Symbol
Features
• 6A, 600V at T
C
= 25
o
C
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 130ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-252AA
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
HGTD3N60C3S TO-252AA G3N60C
HGTP3N60C3 TO-220AB G3N60C
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in Tape and Reel, i.e.,
HGTD3N60C3S9A.
C
E
G
E
G
COLLECTOR
(FLANGE)
E
C
G
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet December 2001
©2001 Fairchild Semiconductor Corporation HGTD3N60C3S, HGTP3N60C3 Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C
ALL TYPES UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600 V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
6A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
3A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
24 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
±
20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
±
30 V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA 18A at 480V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
33 W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/
o
C
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 10V (Figure 6) . . . . . . . . . . . . . . . . . . . . .t
SC
8
µ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 82
Ω.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
CES
I
C
= 250
µ
A, V
GE
= 0V 600 - - V
Emitter to Collector Breakdown Voltage BV
ECS
I
C
= 3mA, V
GE
= 0V 16 30 - V
Collector to Emitter Leakage Current I
CES
V
CE
= BV
CES
T
C
= 25
o
C - - 250
µ
A
T
C
= 150
o
C - - 2.0 mA
Collector to Emitter Saturation Voltage V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C - 1.65 2.0 V
T
C
= 150
o
C - 1.85 2.2 V
Gate to Emitter Threshold Voltage V
GE(TH)
I
C
= 250
µ
A, V
CE
= V
GE
T
C
= 25
o
C 3.0 5.5 6.0 V
Gate to Emitter Leakage Current I
GES
V
GE
=
±
25V - -
±
250 nA
Switching SOA SSOA T
J
= 150
o
C,
R
G
= 82
Ω,
V
GE
= 15V, L = 1mH
V
CE(PK)
= 480V 18 - - A
V
CE(PK)
= 600V 2 - - A
Gate to Emitter Plateau Voltage V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
- 8.3 - V
On-State Gate Charge Q
g(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V - 10.8 13.5 nC
V
GE
= 20V - 13.8 17.3 nC
Current Turn-On Delay Time t
d(ON)I
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
Ω
L = 1mH
Test Circuit (Figure 18)
-5-ns
Current Rise Time t
rI
-10-ns
Current Turn-Off Delay Time t
d(OFF)I
- 325 400 ns
Current Fall Time t
fI
- 130 275 ns
Turn-On Energy E
ON
-85-
µ
J
Turn-Off Energy (Note 3) E
OFF
- 245 -
µ
J
Thermal Resistance R
θ
JC
- - 3.75
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). The HGTP3N60C3 and HGTD3N60C3S were tested per JEDEC standard No.
24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-
On losses include diode losses.
HGTD3N60C3S, HGTP3N60C3
©2001 Fairchild Semiconductor Corporation HGTD3N60C3S, HGTP3N60C3 Rev. B
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
6 8 10 12
0
2
4
8
10
12
14
14
6
16
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
CE
= 10V
4
18
20
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T
C
= 25
o
C
0246810
12V
V
GE
= 15V
0
2
4
8
10
12
14
6
16
18
20
10V
8.0V
9.0V
8.5V
7.5V
7.0V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0123 45
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= -40
o
C
0
2
4
8
10
12
14
6
16
18
20
T
C
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
012345
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250µs
0
2
4
8
10
12
14
6
16
18
20
T
C
= 25
o
C
T
C
= -40
o
C
25 50 75 100 125 150
0
1
2
3
4
5
I
CE
, DC COLLECTOR CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
7
6
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
0
20
30
50
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µS)
10 11 12
V
GE
, GATE TO EMITTER VOLTAGE (V)
14 1513
60
40
10
I
SC
t
SC
0
4
10
14
V
CE
= 360V, R
G
= 82Ω, T
J
= 125
o
C
2
6
8
12
70
HGTD3N60C3S, HGTP3N60C3
P1-P3P4-P6P7-P7

HGTD3N60C3S9A

Mfr. #:
Buy HGTD3N60C3S9A
Manufacturer:
ON Semiconductor
Description:
IGBT 600V 6A 33W TO252AA
Lifecycle:
New from this manufacturer.
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