BC848_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 3 of 12
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 30 V
V
CEO
collector-emitter voltage open base - 30 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse;
t
p
1ms
-200mA
I
BM
peak base current single pulse;
t
p
1ms
-200mA
P
tot
total power dissipation T
amb
25 °C
[1]
SOT23 - 250 mW
SOT323 - 200 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature 65 +150 °C
T
stg
storage temperature 65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
SOT23 - - 500 K/W
SOT323 - - 625 K/W
BC848_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 4 of 12
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
7. Characteristics
[1] Pulse test: t
p
300 μs; δ≤0.02.
[2] V
BEsat
decreases by approximately 1.7 mV/K with increasing temperature.
[3] V
BE
decreases by approximately 2 mV/K with increasing temperature.
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=30V; I
E
=0A - - 15 nA
V
CB
=30V; I
E
=0A;
T
j
= 150 °C
--5μA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
E
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=5V; I
C
=10μA-150-
V
CE
=5V; I
C
=2mA
BC848B 200 290 450
BC848W 110 - 800
V
CEsat
collector-emitter
saturation voltage
I
C
=10mA; I
B
= 0.5 mA - 90 250 mV
I
C
= 100 mA; I
B
=5mA
[1]
- 200 600 mV
V
BEsat
base-emitter
saturation voltage
I
C
=10mA; I
B
=0.5mA
[2]
-700- mV
I
C
= 100 mA; I
B
=5mA
[2]
-900- mV
V
BE
base-emitter voltage I
C
=2mA; V
CE
=5V
[3]
580 660 700 mV
I
C
=10mA; V
CE
=5V
[3]
- - 770 mV
f
T
transition frequency V
CE
=5V; I
C
=10mA;
f = 100 MHz
100 - - MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
-2.53pF
NF noise figure V
CE
=5V; I
C
=200μA;
R
S
=2kΩ; f = 1 kHz;
B=200Hz
- 2 10 dB
BC848_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 5 of 12
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
V
CE
=5V
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= 55 °C
V
CE
=5V
(1) T
amb
= 55 °C
(2) T
amb
=25°C
(3) T
amb
= 150 °C
Fig 1. BC848B: DC current gain as a function of
collector current; typical values
Fig 2. BC848B: Base-emitter voltage as a function of
collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= 55 °C
I
C
/I
B
=10
(1) T
amb
= 55 °C
(2) T
amb
=25°C
(3) T
amb
= 150 °C
Fig 3. BC848B: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 4. BC848B: Base-emitter saturation voltage as a
function of collector current; typical values
mgt727
10
1
11010
2
10
3
I
C
(mA)
0
600
500
400
300
200
100
h
FE
(1)
(2)
(3)
0
1200
1000
800
600
400
200
mgt728
10
2
10
1
11010
2
10
3
I
C
(mA)
V
BE
(mV)
(1)
(2)
(3)
10
4
10
3
10
2
10
mgt729
10
1
11010
2
10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)
(3)
mgt730
10
1
11010
2
10
3
I
C
(mA)
0
1200
1000
800
600
400
200
V
BEsat
(mV)
(1)
(2)
(3)

BC848B,215

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS GP TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
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