BC848_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 3 of 12
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 30 V
V
CEO
collector-emitter voltage open base - 30 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
-200mA
I
BM
peak base current single pulse;
t
p
≤ 1ms
-200mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
SOT23 - 250 mW
SOT323 - 200 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
SOT23 - - 500 K/W
SOT323 - - 625 K/W