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VS-MUR1020CT-M3

P1-P3P4-P6P7-P7
VS-MUR1020CT-M3
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-17
1
Document Number: 96199
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 10 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
VS-MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
Package 3L TO-220AB
I
F(AV)
2 x 5 A
V
R
200 V
V
F
at I
F
0.87 V
t
rr
typ. See Recovery table
T
J
max. 175 °C
Circuit configuration Common cathode
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
3L TO-220AB
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current
per leg
I
F(AV)
5
A
total device Rated V
R
, T
C
= 149 °C 10
Non-repetitive peak surge current per leg I
FSM
50
Peak repetitive forward current per leg I
FM
Rated V
R
, square wave, 20 kHz
T
C
= 149 °C
10
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS PER LEG (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 200 - -
V
Forward voltage V
F
I
F
= 5 A, T
J
= 125 °C - 0.87 0.99
I
F
= 10 A, T
J
= 125 °C - 1.02 1.20
I
F
= 10 A - 1.12 1.25
Reverse leakage current I
R
V
R
= V
R
rated - - 10
μA
T
J
= 150 °C, V
R
= V
R
rated - - 250
Junction capacitance C
T
V
R
= 200 V - 8 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
VS-MUR1020CT-M3
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-17
2
Document Number: 96199
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - - 35
ns
I
F
= 0.5 A, I
R
= 1.0 A, I
REC
= 0.25 A - - 25
T
J
= 25 °C
I
F
= 5 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-24-
T
J
= 125 °C - 35 -
Peak recovery current I
RRM
T
J
= 25 °C - 3.3 -
A
T
J
= 125 °C - 5.0 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 33 -
nC
T
J
= 125 °C - 76 -
THERMAL MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
--5
°C/W
Thermal resistance,
junction to ambient per leg
R
thJA
--50
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth,
and greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style 3L TO-220AB MUR1020CT
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
0.1
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
0.01
0.1
1
10
100
0 8040 120 160 200
0.0001
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
VS-MUR1020CT-M3
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-17
3
Document Number: 96199
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
1 10 100 1000
100
10
1
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance (°C/W)
1
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
02468
180
170
160
150
140
130
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
See note (1)
Square wave (D = 0.50)
Rated V
R
applied
DC
01234 6785
7
4
3
2
1
0
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
6
5
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
P1-P3P4-P6P7-P7

VS-MUR1020CT-M3

Mfr. #:
Buy VS-MUR1020CT-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 200V 10A TO-220 Fred Pt
Lifecycle:
New from this manufacturer.
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