2SC3326
2014-03-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3326
For Muting and Switching Applications
• High emitter-base voltage: V
EBO
= 25 V (min)
• High reverse h
FE
: Reverse h
FE
= 150 (typ.) (V
CE
= −2 V, I
C
= −4 mA)
• Low on resistance: R
ON
= 1 Ω (typ.) (I
B
= 5 mA)
• High DC current gain: h
FE
= 200 to 1200
• Small package
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
50 V
Collector-emitter voltage V
CEO
20 V
Emitter-base voltage V
EBO
25 V
Collector current I
C
300 mA
Base current I
B
60 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012 g (typ.)
Start of commercial production
1982-12
