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FGA70N33BTDTU

P1-P3P4-P6P7-P9
4 www.fairchildsemi.com
FGA70N33BTD Rev. C0
FGA70N33BTD 330V, 70A PDP IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
012345
0
44
88
132
176
220
8V
20V
T
C
= 25
o
C
15V
12V
10V
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
012345
0
44
88
132
176
220
8V
20V
T
C
= 125
o
C
15V
12V
10V
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0123456
0
44
88
132
176
220
Common Emitter
V
GE
= 15V
T
C
= 25
o
C
T
C
= 125
o
C
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0246810121416
0
44
88
132
176
220
Collector Current, Ic [A]
Gate-Emitter Voltage, Vge [V]
Common Emitter
Vce = 20V
Tc=25
o
C
Tc=125
o
C
0 4 8 121620
0
4
8
12
16
20
I
C
= 20A
40A
70A
Common Emitter
T
C
= 25
o
C
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
25 50 75 100 125 150
0.8
1.0
1.2
1.4
1.6
1.8
2.0
70A
40A
I
C
= 20A
Common Emitter
V
GE
= 15V
Collector-Emitter Voltage, V
CE
[V]
Collector-EmitterCase Temperature, T
C
[
o
C]
5 www.fairchildsemi.com
FGA70N33BTD Rev. C0
FGA70N33BTD 330V, 70A PDP IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
GE
Figure 8. Capacitance Characteristics
Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics
Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
0 4 8 121620
0
4
8
12
16
20
70A
I
C
= 20A
40A
Common Emitter
T
C
= 125
o
C
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
0 102030405060
0
3
6
9
12
15
Common Emitter
T
C
= 25
o
C
200V
V
CC
= 100V
Gate-Emitter Voltage, V
GE
[V]
Gate Charge, Q
g
[nC]
0.1 1 10 100 400
0.01
0.1
1
10
100
500
10ms
1ms
Single Nonrepetitive
Pulse T
C
= 25
o
C
Curves must be derated
linearly with increase
in temperature
DC
10μs
100μs
Collector Current, I
c
[A]
Collector-Emitter Voltage, V
CE
[V]
015304560
1
10
100
Common Emitter
V
CC
= 200V, V
GE
= 15V
I
C
= 20A
T
C
= 25
o
C
T
C
= 125
o
C
t
d(on)
t
r
Switching Time [ns]
Gate Resistance, R
G
[Ω]
200
0 15304560
10
100
1000
Common Emitter
V
CC
= 200V, V
GE
= 15V
I
C
= 20A
T
C
= 25
o
C
T
C
= 125
o
C
t
d(off)
t
f
Switching Time [ns]
Gate Resistance, R
G
[Ω]
Gate Resistance
Gate Resistance
6 www.fairchildsemi.com
FGA70N33BTD Rev. C0
FGA70N33BTD 330V, 70A PDP IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs. Collector Current
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
20 30 40 50 60 70
1
10
100
1000
Common Emitter
V
GE
= 15V, R
G
= 5Ω
T
C
= 25
o
C
T
C
= 125
o
C
t
r
t
d(on)
Switching Time [ns]
Collector Current, I
C
[A]
20 30 40 50 60 70
1
10
100
1000
Common Emitter
V
GE
= 15V, R
G
= 5Ω
T
C
= 25
o
C
T
C
= 125
o
C
t
d(off)
t
f
Switching Time [ns]
Collector Current, I
C
[A]
0 1020304050
1
10
100
1000
Common Emitter
V
CC
= 200V, V
GE
= 15V
I
C
= 20A
T
C
= 25
o
C
T
C
= 125
o
C
E
on
E
off
Switching Loss [mJ]
Gate Resistance, R
G
[Ω]
20 30 40 50 60 70
1
10
100
1000
Common Emitter
V
GE
= 15V, R
G
= 5Ω
T
C
= 25
o
C
T
C
= 125
o
C
E
on
E
off
Switching Loss [mJ]
Collector Current, I
C
[A]
3000
110100
1
10
100
400
Safe Operating Area
V
GE
= 15V, T
C
= 125
o
C
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
600
0 0.5 1.0 1.5 2.0 2.5
1
10
100
T
C
= 25
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 125
o
C
Forward Voltage, V
F
[V]
Forward Current, I
F
[A]
P1-P3P4-P6P7-P9

FGA70N33BTDTU

Mfr. #:
Buy FGA70N33BTDTU
Manufacturer:
ON Semiconductor
Description:
IGBT 330V 149W TO3P
Lifecycle:
New from this manufacturer.
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