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APTM10DAM02G

P1-P3P4-P6P7-P7
APTM10DAM02G
APTM10DAM02G– Rev 2 October, 2012
www.microsemi.com
4-7
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6V
7V
8V
0
500
1000
1500
2000
2500
0 4 8 1216202428
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
Low Voltage Output Characteristics
V
GS
=15V, 10V & 9V
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
80
160
240
320
400
480
01234567
V
GS
, Gate to Source Voltage (V)
I
D
, Drain Current (A)
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
0 100 200 300 400 500
I
D
, Drain Current (A)
R
DS(on)
Drain to Source ON Resistance
Normalized to
V
GS
=10V @ 200A
0
100
200
300
400
500
25 50 75 100 125 150
T
C
, Case Temperature (°C)
I
D
, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTM10DAM02G
APTM10DAM02G– Rev 2 October, 2012
www.microsemi.com
5-7
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25 0 25 50 75 100 125 150
T
J
, Junction Temperature (°C)
BV
DSS
, Drain to Source Breakdown
Volta
g
e
(
Normalized
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
T
J
, Junction Temperature (°C)
RDS(on), Drain to Source ON resistance
(Normalized)
V
GS
=10V
I
D
= 200A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T
C
, Case Temperature (°C)
V
GS
(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
10ms
1ms
100µs
1
10
100
1000
10000
1 10 100
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
Single pulse
T
J
=150°C
T
C
=25°C
limited by
R
DSon
Ciss
Crss
Coss
1000
10000
100000
0 1020304050
V
DS
, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
V
DS
=20V
V
DS
=50V
V
DS
=80V
0
2
4
6
8
10
12
14
16
0 400 800 1200 1600 2000
Gate Charge (nC)
V
GS
, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
I
D
=400A
T
J
=25°C
APTM10DAM02G
APTM10DAM02G– Rev 2 October, 2012
www.microsemi.com
6-7
Delay Times vs Current
t
d(on)
t
d(off)
0
100
200
300
400
500
600
50 150 250 350 450 550 650
I
D
, Drain Current (A)
t
d(on)
and t
d(off)
(ns)
V
DS
=66V
R
G
=1.25Ω
T
J
=125°C
L=100µH
Rise and Fall times vs Current
t
r
t
f
0
50
100
150
200
250
300
50 150 250 350 450 550 650
I
D
, Drain Current (A)
t
r
and t
f
(ns)
V
DS
=66V
R
G
=1.25Ω
T
J
=125°C
L=100µH
Switching Energy vs Current
E
on
E
off
E
off
0
1
2
3
4
5
50 150 250 350 450 550 650
I
D
, Drain Current (A)
E
on
and E
off
(mJ)
V
DS
=66V
R
G
=1.25Ω
T
J
=125°C
L=100µH
E
on
E
off
1
2
3
4
5
6
7
8
9
0 2.5 5 7.5 10 12.5 15
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
V
DS
=66V
I
D
=400A
T
J
=125°C
L=100µH
Hard
switching
ZVS
ZCS
0
10
20
30
40
50
60
100 200 300 400 500
I
D
, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
V
DS
=66V
D=50%
R
G
=1.25Ω
T
J
=125°C
T
C
=75°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V
SD
, Source to Drain Voltage (V)
I
DR
, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
P1-P3P4-P6P7-P7

APTM10DAM02G

Mfr. #:
Buy APTM10DAM02G
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power Module - Mosfet
Lifecycle:
New from this manufacturer.
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