OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

2N7002A-7

P1-P3P4-P6
2N7002A
Document number: DS31360 Rev. 12 - 2
1 of 6
www.diodes.com
July 2013
© Diodes Incorporated
2N7002A
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
60V
6Ω @ V
GS
= 5V
200mA
Description
This MOSFET has been designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Motor Control
Power Management Functions
Features and Benefits
N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1.2kV HBM
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
2N7002A-7 SOT23 3,000/Tape & Reel
2N7002A-13 SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
SOT23
Top View Equivalent Circuit
Top View
Pin-Out
D
G
S
ESD PROTECTED TO 1.2kV
Source
Gate
Protection
Diode
Gate
Drain
e3
2N7002A
Document number: DS31360 Rev. 12 - 2
2 of 6
www.diodes.com
July 2013
© Diodes Incorporated
2N7002A
NEW PRODUCT
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +85°C
T
A
= +100°C
I
D
180
130
115
mA
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +85°C
T
A
= +100°C
I
D
220
160
140
mA
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
0.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
800 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
370
mW
(Note 6) 540
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
348
°C/W
(Note 6) 241
Thermal Resistance, Junction to Case
(Note 6)
R
θJC
91
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
MN1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Shanghai A/T Site Chengdu A/T Site
Y
M
Y
MN1
YM
MN1
YM
2N7002A
Document number: DS31360 Rev. 12 - 2
3 of 6
www.diodes.com
July 2013
© Diodes Incorporated
2N7002A
NEW PRODUCT
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60 70
V
V
GS
= 0V,
I
D
= 10µA
Zero Gate Voltage Drain Current @ T
C
= +25°C
@ T
C
= +125°C
I
DSS
1.0
500
µA
V
DS
= 60V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
±10 µA
V
GS
=
±20V,
V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.2
2.0 V
V
DS
= V
GS
,
I
D
= 250µA
Static Drain-Source On-Resistance @ T
J
= +25°C
@ T
J
= +125°C
R
DS(ON)
3.5
3.0
6
5
V
GS
= 5.0V,
I
D
=
0.115A
V
GS
= 10V, I
D
=
0.115A
Forward Transconductance
g
FS
80
mS
V
DS
= 10V,
I
D
=
0.115A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
23
pF
V
DS
= 25V,
V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
3.4
pF
Reverse Transfer Capacitance
C
rss
1.4
pF
Gate Resistance
R
G

260 400
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time
t
D(ON)
10
ns
V
DD
= 30V, I
D
= 0.115A,
R
L
= 150,
V
GEN
= 10V
,
R
GEN
= 25
Turn-Off Delay Time
t
D(OFF)
33
ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
0
0.1
0.2
0.3
0.4
0.5
0.6
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.01
0.1
1
12345
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = 5V
Pulsed
DS
P1-P3P4-P6

2N7002A-7

Mfr. #:
Buy 2N7002A-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-CHANNEL ENHANCEMENT MODE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet