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VS-STPS20L15G-M3

P1-P3P4-P6P7-P9P10-P11
VS-STPS20L15G-M3
www.vishay.com
Vishay Semiconductors
Revision: 06-Nov-17
1
Document Number: 96397
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 20 A
FEATURES
• 125 °C T
J
operation (V
R
< 5 V)
• Center tap module
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The Schottky rectifier module has been optimized for
ultra low forward voltage drop specifically for the OR-ing
of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
PRIMARY CHARACTERISTICS
I
F(AV)
20 A
V
R
15 V
V
F
at I
F
0.33 V
I
RM
max. 600 mA at 100 °C
T
J
max. 125 °C
E
AS
10 mJ
Package D
2
PAK (TO-263AB)
Circuit configuration Single
Anode
1
3
Base
cathode
2
N/C
D
2
PAK (TO-263AB)
1
2
3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 20 A
V
RRM
15 V
I
FSM
t
p
= 5 μs sine 700 A
V
F
19 A
pk
, T
J
= 125 °C (typical) 0.25 V
T
J
Range -55 to +125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS VS-STPS20L15G-M3 UNITS
Maximum DC reverse voltage V
R
T
J
= 100 °C 15 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 85 °C, rectangular waveform 20
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
700
10 ms sine or 6 ms rect. pulse 330
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 6 mH 10 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A
VS-STPS20L15G-M3
www.vishay.com
Vishay Semiconductors
Revision: 06-Nov-17
2
Document Number: 96397
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Forward voltage drop
See fig. 1
V
FM
(1)
19 A
T
J
= 25 °C
-0.41
V
40 A - 0.52
19 A
T
J
= 125 °C
0.25 0.33
40 A 0.37 0.50
Reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
-10
mA
T
J
= 100 °C - 600
Threshold voltage V
F (TO)
T
J
= T
J
maximum
0.182 V
Forward slope resistance r
t
7.6 mW
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C - 2000 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8 - nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
-55 to +125
°C
Maximum storage temperature range T
Stg
-55 to +150
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
1.5
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased (for TO-220) 0.50
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation (for D
2
PAK) 40
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D
2
PAK (TO-263AB) STPS20L15G
VS-STPS20L15G-M3
www.vishay.com
Vishay Semiconductors
Revision: 06-Nov-17
3
Document Number: 96397
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
100
10
1000
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.8 1.2
1.6
1.0
1.4
0
T
J
= 125 °C
T
J
= 75 °C
T
J
= 25 °C
1
10
100
0.1
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
63912
15
0
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
1000
10 000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
10515
20
0
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
100 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P9P10-P11

VS-STPS20L15G-M3

Mfr. #:
Buy VS-STPS20L15G-M3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Lifecycle:
New from this manufacturer.
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