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IPI70N12S311AKSA1
P1-P3
P4-P6
P7-P9
IPB7
0N12
S3-1
1
IPI70N12S3-11, IPP70N12S
3-11
OptiMOS
®
-T Powe
r-Transistor
Features
• OptiMOS
TM
- power MOSFET for automotive applications
• N-channel - Enhancement mode
• Automotive AEC Q101 qual
ified
• MSL1 up to 260°
C peak reflow
• 175°C operating te
mperature
• Green product (RoHS compliant)
• 100% Avalan
che tested
Maximum ratings,
at
T
j
=25 °C, unless otherw
ise specified
Parameter
Symbol
Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C,
V
GS
=10 V
70
A
T
C
=100 °C,
V
GS
=10 V
2)
48
Pulsed drain current
1)
I
D,pulse
T
C
=25 °C
280
Avalanche energy
, single pulse
1)
E
AS
I
D
=35A
410
mJ
Avalanche current, singl
e pulse
I
AS
-
70
A
Gate source voltage
V
GS
-
±20
V
Power dissipati
on
P
tot
T
C
=25 °C
125
W
Operating and storage temperature
T
j
,
T
stg
-
-55 ... +175
°C
Value
V
DS
120
V
R
DS(on),max
(SMD version)
11.3
m
W
I
D
70
A
Product Summary
PG
-T
O220-3-1
PG
-T
O262-3-1
PG
-T
O263-3-2
Type
Package
Marking
IPB70N12S3-
11
PG
-T
O263-3-2
3N1211
IPI70N12S3-
11
PG
-T
O262-3-1
3N1211
IPP70N12S3-
11
PG
-T
O220-3-1
3N1211
Rev. 1.0
page 1
2016-06-20
IPB7
0N12
S3-11
IPI70N12S3-11, IPP70N12S
3-11
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics
1)
Therm
al resistance, junction - case
R
thJC
-
-
-
1.2
K/W
Therm
al resistance, junction -
ambient, leaded
R
thJA
-
-
-
62
SMD version, devi
c
e on PCB
R
thJA
minim
al footprint
-
-
62
6 cm
2
cooling area
2)
-
-
40
Electrical characteristics,
at
T
j
=25 °C, unless otherw
ise spec
ified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
= 1 mA
120
-
-
V
Gate threshold voltag
e
V
GS(th)
V
DS
=
V
GS
,
I
D
=83µA
2.0
3.0
4.0
Zero gate voltage d
rain current
I
DSS
V
DS
=120V,
V
GS
=0V,
T
j
=25°C
-
0.01
0.1
µA
V
DS
=120V,
V
GS
=0V,
T
j
=125°C
2)
-
1
10
Gate-source leakage current
I
GSS
V
GS
=20V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10V,
I
D
=70A
-
9.7
11.6
m
W
V
GS
=10V,
I
D
=70A,
SMD version
-
9.4
11.3
Values
Rev. 1.0
page 2
2016-06-20
IPB7
0N12
S3-11
IPI70N12S3-11, IPP70N12S
3-11
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics
1)
Input capacitance
C
iss
-
3350
4355
pF
Output capacitance
C
oss
-
940
1222
Reverse transfer capacitance
C
rss
-
105
158
Turn-on delay
time
t
d(on)
-
17
-
ns
Rise time
t
r
-
8
-
Turn-of
f delay
tim
e
t
d(off)
-
25
-
Fall time
t
f
-
8
-
Gate Charge Characteristics
1)
Gate to source charge
Q
gs
-
18
23
nC
Gate to drain charge
Q
gd
-
16
24
Gate charge total
Q
g
-
51
65
Gate plateau vol
tage
V
plateau
-
5.5
-
V
Reverse Diode
Diode continous forward current
1)
I
S
-
-
70
A
Diode pulse current
1)
I
S,pulse
-
-
280
Diode forward voltag
e
V
SD
V
GS
=0 V,
I
F
=70 A,
T
j
=25 °C
0.6
1
1.2
V
Reverse recovery
tim
e
1)
t
rr
V
R
=60V,
I
F
=50A,
d
i
F
/d
t
=100A/µs
-
100
-
ns
Reverse recovery
c
harge
1)
Q
rr
-
265
-
nC
2)
Device on 40 m
m x 40 mm x 1.5 mm epo
xy
PCB FR4 with 6 cm
2
(one layer, 70 µm
thick) c
opper area for d
rain
connecti
on. PCB is vertica
l in stil
l air.
T
C
=25°C
Values
V
GS
=0V,
V
DS
=25V,
f
=1MHz
V
DD
=20 V,
V
GS
=10 V,
I
D
=70 A,
R
G
=3.5
W
V
DD
=96 V,
I
D
=70 A,
V
GS
=0 to 10 V
1)
Defined by des
ign. Not sub
ject to prod
uction tes
t.
Rev. 1.0
page 3
2016-06-20
P1-P3
P4-P6
P7-P9
IPI70N12S311AKSA1
Mfr. #:
Buy IPI70N12S311AKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL 100+
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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