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PBSS3515M,315

P1-P3P4-P6P7-P9
2003 Jul 22 4
Philips Semiconductors Product specification
15 V, 0.5 A
PNP low V
CEsat
(BISS) transistor
PBSS3515M
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −15 V; I
E
=0 −−−100 nA
V
CB
= −15 V; I
E
= 0; T
j
= 150 °C −−−50 µA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
=0 −−−100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −10 mA 200 −−
V
CE
= −2 V; I
C
= −100 mA; note 1 150 −−
V
CE
= −2 V; I
C
= −500 mA; note 1 90 −−
V
CEsat
collector-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA −−−25 mV
I
C
= −200 mA; I
B
= −10 mA; note 1 −−−150 mV
I
C
= −500 mA; I
B
= −50 mA; note 1 −−−250 mV
R
CEsat
equivalent on-resistance I
C
= −500 mA; I
B
= −50 mA; note 1 − 300 <500 mΩ
V
BEsat
base-emitter saturation voltage I
C
= −500 mA; I
B
= −50 mA; note 1 −−−1.1 V
V
BEon
base-emitter turn-on voltage V
CE
= −2 V; I
C
= −100 mA; note 1 −−−0.9 V
f
T
transition frequency I
C
= −100 mA; V
CE
= −5V;
f = 100 MHz
100 280 − MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=I
e
= 0; f = 1 MHz −−10 pF
2003 Jul 22 5
Philips Semiconductors Product specification
15 V, 0.5 A
PNP low V
CEsat
(BISS) transistor
PBSS3515M
handbook, halfpage
0
400
600
200
MLD665
−10
−1
−1 −10
I
C
(mA)
h
FE
−10
2
−10
3
(2)
(1)
(3)
Fig.2 DC current gain as a function of collector
current; typical values.
(1) T
amb
= 150 °C.
(2) T
amb
=25°C.
(3) T
amb
= −55 °C.
V
CE
= −2V.
handbook, halfpage
−200
−1200
−400
−600
−800
−1000
MLD667
−1−10
−1
I
C
(mA)
V
BE
(mV)
−10 −10
2
−10
3
(1)
(3)
(2)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
(1) T
amb
= −55 °C.
(2) T
amb
=25°C.
(3) T
amb
= 150 °C.
V
CE
= −2V.
handbook, halfpage
−10
3
−10
2
−10
−1
MLD669
−10
−1
−1 −10
I
C
(mA)
V
CEsat
(mV)
−10
2
−10
3
(1)
(2)
(3)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
(1) T
amb
= 150 °C.
(2) T
amb
=25°C.
(3) T
amb
= −55 °C.
I
C
/I
B
= 20.
handbook, halfpage
−200
−1200
−400
−600
−800
−1000
MLD668
−1−10
−1
I
C
(mA)
V
BEsat
(mV)
−10 −10
2
−10
3
(2)
(3)
(1)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
(1) T
amb
= 150 °C.
(2) T
amb
=25°C.
(3) T
amb
= −55 °C.
I
C
/I
B
= 20.
2003 Jul 22 6
Philips Semiconductors Product specification
15 V, 0.5 A
PNP low V
CEsat
(BISS) transistor
PBSS3515M
handbook, halfpage
0
(1)
(2)(3)
(4)
(5)
(6)
(7)
(8)
(10)
I
C
(mA)
V
CE
(V)
−1200
−800
−400
0
−2 −10
−4 −6 −8
MLD666
(9)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= −7 mA.
(2) I
B
= −6.3 mA.
(3) I
B
= −5.6 mA.
(4) I
B
= −4.9 mA.
(5) I
B
= −4.2 mA.
(6) I
B
= −3.5 mA.
(7) I
B
= −2.8 mA.
(8) I
B
= −2.1 mA.
(9) I
B
= −1.4 mA.
(10) I
B
= −0.7 mA.
T
amb
=25°C.
handbook, halfpage
10
3
10
2
10
1
10
−1
MLD670
−10
−1
−1 −10
I
C
(mA)
R
CEsat
(Ω)
−10
2
−10
3
(1)
(3)(2)
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
=25°C.
(3) T
amb
= −55 °C.
P1-P3P4-P6P7-P9

PBSS3515M,315

Mfr. #:
Buy PBSS3515M,315
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
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