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ADG787BRMZ

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
ADG787
Rev. A | Page 3 of 16
SPECIFICATIONS
V
DD
= 4.2 V to 5.5 V, GND = 0 V, unless otherwise noted.
Table 1.
Parameter +25°C B Version
1
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to V
DD
V
On Resistance (R
ON
) 2.5 Ω typ V
DD
= 4.2 V, V
S
= 0 V to V
DD
, I
S
= 10 mA
3 3.45 Ω max See Figure 28
On Resistance Match Between Channels (ΔR
ON
) 0.02 Ω typ V
DD
= 4.2 V, V
S
= 3.5 V, I
S
= 10 mA
0.1 Ω max
On Resistance Flatness (R
FLAT (ON)
) 0.65 Ω typ V
DD
= 4.2 V, V
S
= 0 V to V
DD
0.8 0.95 Ω max I
S
= 10 mA
LEAKAGE CURRENTS V
DD
= 5.5 V
Source Off Leakage, I
S
(OFF) ±0.05 nA typ V
S
= 1 V/4.5 V, V
D
= 4.5 V/1 V; see Figure 29
Channel On Leakage, I
D
, I
S
(ON) ±0.05 nA typ V
S
= V
D
= 1 V or 4.5 V; see Figure 30
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
C
IN
, Digital Input Capacitance 2.5 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
13 ns typ R
L
= 50 Ω, C
L
= 35 pF
19 22 ns max V
S
= 3 V; see Figure 31
t
OFF
3 ns typ R
L
= 50 Ω, C
L
= 35 pF
5 6 ns max V
S
= 3 V; see Figure 31
Propagation Delay Skew, t
SKEW
0.06 ns typ C
L
= 50 pF; V
S
= 3 V
0.15 ns max
Break-Before-Make Time Delay (t
BBM
) 10 ns typ R
L
= 50 Ω, C
L
= 35 pF
5 ns min V
S1
= V
S2
= 3 V; see Figure 32
Charge Injection 14 pC typ V
D
= 1 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 33
Off Isolation −63 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 34
Channel-to-Channel Crosstalk −110 dB typ
S1A to S2A/S1B to S2B; R
L
= 50 Ω, C
L
= 5 pF,
f = 1 MHz; see
Figure 37
−63 dB typ
S1A to S1B/S2A to S2B; R
L
= 50 Ω, C
L
= 5 pF,
f = 1 MHz; see
Figure 36
Total Harmonic Distortion (THD + N) 0.03 % R
L
= 32 Ω, f = 20 Hz to 20 kHz, V
S
= 2 V p-p
Insertion Loss −0.2 dB typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 36
−3 dB Bandwidth 145 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 36
C
S
(OFF) 16 pF typ
C
D
, C
S
(ON) 40 pF typ
POWER REQUIREMENTS V
DD
= 5.5 V
I
DD
0.005 μA typ Digital inputs = 0 V or 5.5 V
1 μA max
1
Temperature ranges: B version: −40°C to +85°C for the MSOP and LFCSP packages, and −25°C to +85°C for the WLCSP package.
2
Guaranteed by design, not production tested.
ADG787
Rev. A | Page 4 of 16
V
DD
= 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter +25°C B Version
1
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
On Resistance (R
ON
) 4 Ω typ V
DD
= 2.7 V, V
S
= 0 V to V
DD
5.75 6 Ω max I
S
= 10 mA; see Figure 28
On Resistance Match Between Channels (ΔR
ON
) 0.07 Ω typ V
DD
= 2.7 V, V
S
= 1.5 V
0.3 0.35 Ω max I
S
= 10 mA
On Resistance Flatness (R
FLAT (ON)
) 1.6 Ω typ V
DD
= 2.7 V, V
S
= 0 V to V
DD
2.3 2.6 Ω max I
S
= 10 mA
LEAKAGE CURRENTS V
DD
= 3.6 V
Source Off Leakage, I
S
(OFF) ±0.01 nA typ V
S
= 0.6 V/3.3 V, V
D
= 3.3 V/0.6 V; see Figure 29
Channel On Leakage, I
D
, I
S
(ON) ±0.01 nA typ V
S
= V
D
= 0.6 V or 3.3 V; see Figure 30
DIGITAL INPUTS
Input High Voltage, V
INH
1.3 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
±0.1 μA max
C
IN
, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
18 ns typ R
L
= 50 Ω, C
L
= 35 pF
30 35 ns max V
S
= 1.5 V; see Figure 31
t
OFF
4 ns typ R
L
= 50 Ω, C
L
= 35 pF
6 7 ns max V
S
= 1.5 V; see Figure 31
Propagation Delay Skew, t
SKEW
0.04 ns typ C
L
= 50 pF; V
S
= 1.5 V
0.12 ns max
Break-Before-Make Time Delay (t
BBM
) 15 ns typ R
L
= 50 Ω, C
L
= 35 pF
5 ns min V
S1
= V
S2
= 1.5 V; see Figure 32
Charge Injection 10 pC typ V
D
= 1.25 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 33
Off Isolation −63 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 34
Channel-to-Channel Crosstalk −110 dB typ
S1A to S2A/S1B to S2B; R
L
= 50 Ω, C
L
= 5 pF,
f = 1 MHz; see
Figure 37
−63 dB typ
S1A to S1B/S2A to S2B; R
L
= 50 Ω, C
L
= 5 pF,
f = 1 MHz; see
Figure 35
Total Harmonic Distortion (THD + N) 0.07 % R
L
= 32 Ω, f = 20 Hz to 20 kHz, V
S
= 1.5 V p-p
Insertion Loss −0.24 dB typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 36
−3 dB Bandwidth 145 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 36
C
S
(OFF) 16 pF typ
C
D
, C
S
(ON) 40 pF typ
POWER REQUIREMENTS V
DD
= 3.6 V
I
DD
0.005 μA typ Digital inputs = 0 V or 3.6 V
1 μA max
1
Temperature range: B version: −40°C to +85°C for the MSOP and LFCSP packages, and −25°C to +85°C for the WLCSP package.
2
Guaranteed by design, not production tested.
ADG787
Rev. A | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Rating
V
DD
to GND −0.3 V to +6 V
Analog Inputs
1
, Digital Inputs
−0.3 V to V
DD
+ 0.3 V or
30 mA (whichever
occurs first)
Peak Current, S or D
5 V Operation 300 mA
3.3 V Operation
200 mA (pulsed at 1 ms,
10% duty cycle max)
Continuous Current, S or D
5 V Operation 100 mA
3.3 V Operation 80 mA
Operating Temperature Range
Extended Industrial (B Version)
MSOP and LFCSP packages −40°C to +85°C
Industrial (B version)
WLCSP package −25°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
WLCSP Package (4-Layer Board)
θ
JA
Thermal Impedance 120°C/W
LFCSP Package (4-Layer Board)
θ
JA
Thermal Impedance 61°C/W
MSOP Package (4-Layer Board)
θ
JA
Thermal Impedance 142°C/W
θ
JC
Thermal Impedance 43.7°C/W
Lead-Free Temperature Soldering
IR Reflow, Peak Temperature
Peak Temperature 260(+0/−5)°C
Time at Peak Temperature 10 sec to 40 sec
1
Overvoltages at the IN, S, or D pins are clamped by internal diodes. Current
should be limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at any one
time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

ADG787BRMZ

Mfr. #:
Buy ADG787BRMZ
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs 63dB 2.5 Ohm CMOS DL 2:1 Mux/DMux USB 1.1
Lifecycle:
New from this manufacturer.
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