UPA806T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
SILICON TRANSISTOR
• SMALL PACKAGE STYLE:
2 NE685 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE:
NF = 1.5 dB TYP at 2 GHz
• HIGH GAIN:
|S
21E|
2
= 8.5 dB TYP at 2 GHz
• HIGH GAIN BANDWIDTH: f
T = 12 GHz
• EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
FEATURES
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06
(Top View)
DESCRIPTION
The UPA806T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T, low voltage bias and small size make this device suited for
various hand-held wireless applications.
T608APUREBMUN TRAP
60SENILTUO EGAKCAP
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
I
CBO Collector Cutoff Current at VCB = 5 V, IE = 0 μ 1.0A
I
EBO Emitter Cutoff Current at VEB = 1 V, IC = 0 μ 1.0A
h
FE
1
Forward Current Gain at VCE = 3 V, IC 05100157Am 01 =
f
T Gain Bandwidth at VCE = 3 V, IC 21zHGzHG 2 = f ,Am 01 =
Cre
2
Feedback Capacitance at VCB = 3 V, IE 7.04.0FpzHM 1 = f ,0 =
|S
21E|
2
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz dB 7 8.5
NF Noise Figure at V
CE = 3 V, IC 5.25.1BdzHG 2 = f ,Am 3 =
h
FE1/hFE2 hFE 58.0:oitaR
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes: 1. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA806T-T1, 3K per reel.
Note:
Pin 3 is identified with a circle on the bottom of the package.
PIN OUT
1. Collector Transistor 1
2. Emitter Transistor 1
3. Collector Transistor 2
4. Emitter Transistor 2
5. Base Transistor 2
6. Base Transistor 1
h
FE1 = Smaller Value of Q1, or Q2
hFE2 = Larger Value of Q1 or Q2
2.1 ± 0.1
1.25 ± 0.1
0 ~ 0.1
0.15
0.9 ± 0.1
0.7
2.0 ± 0.2
0.65
1.3
1
2
3
4
5
6
0.2 (All Leads)
+0.10
- 0.05
