OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

AVT-53663-BLKG

P1-P3P4-P6P7-P9P10-P12P13-P13
AVT-53663
DC – 6000 MHz
InGaP HBT Gain Block
Data Sheet
Description
Avago Technologies’ AVT-53663 is an economical, easy-
to-use, general purpose InGaP HBT MMIC gain block
ampli er utilizing Darlington pair con guration housed in
a 6-lead (SOT-363) surface mount plastic package.
The Darlington feedback structure provides inherent
broad bandwidth performance, resulting in useful
operating frequency up to 6 GHz. This is an ideal device
for small-signal gain cascades or IF ampli cation.
AVT-53663 is fabricated using advanced InGaP HBT
(Hetero-junction Bipolar Transistor) technology that o ers
state-of-the-art reliability, temperature stability and per-
formance consistency.
Component Image
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 160 V
ESD Human Body Model = 2000 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Notes:
Package marking provides
orientation and identi cation
“53” = Device Code
“X” = Month of Manufacture
“” = Pin 1
Typical Biasing Con guration
Pin 1, 2, 4, 5
(GND)
Pin 6
Pin 3
C
byp
R
bias
C
block
C
block
V
d
RFin RFout
V
CC
= 5V
R
bias
= (V
CC
- V
d
)/I
d
C
byp
Features
 Small signal gain ampli er
 Operating frequency DC to 6 GHz
 Unconditionally stable
 50 Ohm input & output
 Flat, Broadband Frequency Response up to 2 GHz
 Industry standard SOT-363
 Lead-free, RoHS compliant, Green
Speci cations
2 GHz, 5V Vcc, 48mA (typical)
 19.5 dB Gain
 15.1 dBm P1dB
 26.5 dBm OIP3
 3.2 dB NF
 10 dB IRL and ORL
Applications
 Cellular / PCS / 3G base station
 Wireless Data / WLAN
 WiMAX / WiBRO
 CATV & Cable modem
 ISM
Top View
GND
GND
53X
Input
GND
GND
Output
& V
d
2
Absolute Maximum Rating
[1]
T
A
=25°C
Symbol Parameter Units Absolute Max.
I
d
Device Current mA 80
P
IN,MAX
CW RF Input Power dBm 18
P
DISS
Total Power Dissipation
[3]
mW 327
T
OPT
Operating Temperature °C -40 to 85
T
J,MAX
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
Thermal Resistance
Thermal Resistance
[2]
jc
= 184°C/W
(I
d
= 48 mA, T
c
= 85°C)
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infrared
measurement technique.
3. Ground lead temperature is 25°C. Derate
5.5mW/°C for T
c
>90°C.
Electrical Speci cations
[1]
T
A
= 25°C, Zo = 50 , V
CC
= 5 V, R
bias
= 22 , P
in
= -15 dBm (unless speci ed otherwise)
Symbol Parameter and Test Condition Frequency Units Min. Typ. Max.
I
d
Device Current mA 44.0 47.6 51.0
Gp Power Gain 900 MHz
2000 MHz
dB
18.0
21.8
19.5 21.0
OIP3
[2]
Output 3
rd
Intercept Point 900 MHz
2000 MHz
dBm
25.0
28.9
26.5
S11
Input Return Loss, 50 source
900 MHz
2000 MHz
dB -16.5
-12.0
S22
Output Return Loss, 50 load
900MHz
2000 MHz
dB -17.3
-13.4
S12 Reverse Isolation 900 MHz
2000 MHz
dB -24.3
-24.7
P1dB Output Power at 1dB Gain Compression 900 MHz
2000 MHz
dBm 16.0
15.1
NF Noise Figure 900 MHz
2000 MHz
dB 2.9
3.2
Notes:
1. Measurements obtained on CPWG line with reference plane at the ends of DUT leads (as shown in Figure 1).
2. OIP3 test condition: F
RF1
- F
RF2
= 10MHz with input power of -23 dBm per tone measured at worse side band.
3
Pin 1, 2, 4, 5
(GND)
Pin 6
Pin 3
RFin RFout
V
CC
Zo = 50 Ohm
Zo = 50 Ohm
Bias Tee
R
bias
Figure 1. Block diagram of board used for Id, Gain, OIP3, S11, S22, S12, OP1dB and NF measurements.
Circuit losses have been de-embedded from actual measurements.
Product Consistency Distribution Charts at 2 GHz, V
cc
= 5 V, R
bias
= 22
Figure 2. I
d
(mA) distribution. LSL = 44.5, Nominal = 47.6, USL = 50.5 Figure 3. Gain (dB) distribution. LSL = 18, Nominal = 19.5, USL = 21
Figure 4. OIP3 (dBm) distribution. LSL = 25.5, Nominal = 26.6
Notes:
1. Statistical distribution determined from a sample size of 1500
samples taken from 3 di erent wafers from 2 wafer lots, measured on
a production test board.
2. Future wafers allocated to this product may have typical values
anywhere between the minimum and maximum speci cation limits.
LSL USL
43 44 45 46 47 48 49 50 51
LSL USL
18 19 20 21
LSL
25 26 27 28
P1-P3P4-P6P7-P9P10-P12P13-P13

AVT-53663-BLKG

Mfr. #:
Buy AVT-53663-BLKG
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier DC - 6000 MHz HBT MMIC AMP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet