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VS-30CTH02FPPBF

P1-P3P4-P6P7-P7
VS-30CTH02FP-N3
www.vishay.com
Vishay Semiconductors
Revision: 26-Oct-17
1
Document Number: 96433
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 2 x 15 FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (V
INS
= 2500 V
RMS
)
• UL pending
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
200 V series are the state of the art hyperfast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
R
200 V
V
F
at I
F
0.78 V
t
rr
typ. See Recovery table
T
J
max. 175 °C
Package 3L TO-220 FullPAK
Circuit configuration Common cathode
3L TO-220 FullPAK
1
2
3
VS-30CTH02FP-N3
Anode
1
3
2
Common
cathode
Anode
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current
per diode I
F(AV)
T
C
= 125 °C 15
Aper device 30
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 200
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 200 - -
V
Forward voltage V
F
I
F
= 15 A - 0.92 1.05
I
F
= 15 A, T
J
= 125 °C - 0.78 0.85
Reverse leakage current I
R
V
R
= V
R
rated - - 10
μA
T
J
= 125 °C, V
R
= V
R
rated - 5 300
Junction capacitance C
T
V
R
= 200 V - 57 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH
VS-30CTH02FP-N3
www.vishay.com
Vishay Semiconductors
Revision: 26-Oct-17
2
Document Number: 96433
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
C
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - - 35
ns
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - - 30
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-26-
T
J
= 125 °C - 40 -
Peak recovery current I
RRM
T
J
= 25 °C - 2.8 -
A
T
J
= 125 °C - 6.0 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 37 -
nC
T
J
= 125 °C - 120 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage temperature
range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance, junction-to-case per
diode
R
thJC
Mounting surface, flat, smooth
and greased
--3.5°C/W
Marking device Case style 3L TO-220 FullPAK 30CTH02FP
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
100
10
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
F
- Instantaneous Forward
Current (A)
V
F
- Forward Voltage Drop (V)
0.01
0.1
1
10
100
0 100 200
0.0001
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
150
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= 50 °C
T
J
= 75 °C
50
0.001
VS-30CTH02FP-N3
www.vishay.com
Vishay Semiconductors
Revision: 26-Oct-17
3
Document Number: 96433
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
100
1000
0 50 100 150 200
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
110
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
05 25201510
180
170
150
100
110
120
130
140
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
160
See note (1)
Square wave (D = 0.50)
Rated V
R
applied
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0 5 10 15 20 25
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
5
10
15
20
25
RMS limit
DC
P1-P3P4-P6P7-P7

VS-30CTH02FPPBF

Mfr. #:
Buy VS-30CTH02FPPBF
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers RECOMMENDED ALT 78-VS-30CTH02FP-N3
Lifecycle:
New from this manufacturer.
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