II. Manufacturing Information
A. Description/Function: Xenon Photoflash Charger with IGBT Driver and Voltage Monitor
B. Process: S4
C. Number of Device Transistors: 6702
D. Fabrication Location: California, Texas or Japan
E. Assembly Location: Thailand
F. Date of Initial Production: January 19, 2007
III. Packaging Information
A. Package Type: 14-pin TDFN 3x3
B. Lead Frame: Copper
C. Lead Finish: 100% matte Tin
D. Die Attach: Conductive Epoxy
E. Bondwire: Gold (1.3 mil dia.)
F. Mold Material: Epoxy with silica filler
G. Assembly Diagram: #05-9000-2637
H. Flammability Rating: Class UL94-V0
MAX8685AETD+
I. Classification of Moisture Sensitivity per
JEDEC standard J-STD-020-C
Level 1
J. Single Layer Theta Ja: 54°C/W
K. Single Layer Theta Jc: 8.3°C/W
L. Multi Layer Theta Ja: 41°C/W
M. Multi Layer Theta Jc: 8.3°C/W
IV. Die Information
A. Dimensions: 50 X 58 mils
B. Passivation: Si
3
N
4
/SiO
2
(Silicon nitride/ Silicon dioxide
C. Interconnect: Al/0.5%Cu
D. Backside Metallization: None
E. Minimum Metal Width: Metal1 = 0.5 / Metal2 = 0.6 / Metal3 = 0.6 microns (as drawn)
F. Minimum Metal Spacing: Metal1 = 0.45 / Metal2 = 0.5 / Metal3 = 0.6 microns (as drawn)
G. Bondpad Dimensions: 5 mil. Sq.
H. Isolation Dielectric: SiO
2
I. Die Separation Method: Wafer Saw
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