SUM110P06-08L-E3

www.vishay.com
4
Document Number: 73045
S-80273-Rev. B, 11-Feb-08
Vishay Siliconix
SUM110P06-08L
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Junction Temperature
Avalanche Current vs. Time
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150 175
T
J
− Junction Temperature (°C)
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
− On-Resistance
(Normalized)
t
in
(s)
1000
10
0.00001 0.001 0.1 1
100
(A)I
Dav
0.010.0001
I
AV
(A) at T
A
= 25 °C
I
AV
(A) at T
A
= 150 °C
1
0.1
Source-Drain Diode Forward Voltage
Drain Source Breakdown vs.
Junction Temperature
0.0 0.3 0.6 0.9 1.2
V
SD
− Source-to-Drain Voltage (V)
− Source Current (A)I
S
100
10
1
T
J
= 25 °C
T
J
= 150 °C
56
60
64
6
8
72
76
- 50 - 25 0 25 50 75 100 125 150 175
T
J
− Junction Temperature (°C)
(V)
V
(BR)DSS
I
D
= 250 µA
Document Number: 73045
S-80273-Rev. B, 11-Feb-08
www.vishay.com
5
Vishay Siliconix
SUM110P06-08L
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73045.
Maximum Avalanche and Drain Current
vs. Case Temperature
0
50
100
150
200
0 25 50 75 100 125 150 175
T
C
− Case Temperature (°C)
− Drain Current (A)I
D
Package Limited
Safe Operating Area
1000
1
0.1 1 10 100
Limited by r
DS(on)
*
0.1
10
− Drain Current (A)I
D
10 µs
100 µs
T
C
= 25 °C
Single Pulse
100 ms, DC
10 ms
100
1 ms
V
DS
− Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which r
DS(on)
is specified
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
Normalized Effective
Transient
Thermal Impedance
1
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 62.5 °C/W
3. T
JM
− T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.

SUM110P06-08L-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V 110A 272W 8.0mohm @ 10V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet