
CDBER0230L
Page 1
QW-A1099
REV:B
0.053(1.35)
0.045(1.15)
0.034(0.85)
0.026(0.65)
0.030(0.75)
0.024(0.60)
Dimensions in inches and (millimeter)
0.022(0.55) Typ.
0.016(0.40) Typ.
Comchip Technology CO., LTD.
A
mA
V
V
1
200
30
35
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
O
C
O
C
+125
+125
-40
TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
uA
V
30
0.5
IR
VF
Reverse current
Forward voltage
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
VR = 10 V
IF = 200 mA
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
SMD Schottky Barrier Diode
0503/SOD-723F
Features
-
-Designed for mounting on small surface.
-Extremely thin/leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0503/SOD-723F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BA
-Mounting position: Any
-Weight: 0.002 gram(approx.).
Low forward voltage.
Io = 200 mA
VR = 30 Volts
RoHS Device