SIR165DP-T1-GE3 Datasheet SIR165DP-T1-GE3 | P1-P3

SiR165DP

www.vishay.com

Vishay Siliconix

S18-0208-Rev. A, 19-Feb-18

1

Document Number: 75969

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET

®

Gen III p-channel power MOSFET

• Industry leadership R

DS(on)

specifications

(as of November 2017)

• 100 % R

g

and UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Adapter and charger switch

•Load switch

• Motor drive control

•DC/DC converter

• Power supplies

• Battery management

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 65 °C/W

g. T

C

= 25 °C

PRODUCT SUMMARY

V

DS

(V) -30

R

DS(on)

max. () at V

GS

= -10 V 0.0046

R

DS(on)

max. () at V

GS

= -4.5 V 0.0075

Q

g

typ. (nC) 44

I

D

(A) -60

a, g

Configuration Single

PowerPAK

®

SO-8 Single

Top View

1

6.15 mm

5.15 mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

S

G

D

P-Channel MOSFET

ORDERING INFORMATION

Package PowerPAK SO-8

Lead (Pb)-free and halogen-free SiR165DP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

DS

-30

V

Gate-source voltage V

GS

± 20

Continuous drain current (T

J

= 150 °C)

T

C

= 25 °C

I

D

-60

a

A

T

C

= 70 °C -60

a

T

A

= 25 °C -25.9

b, c

T

A

= 70 °C -20.7

b, c

Pulsed drain current (t = 100 μs) I

DM

-120

Continuous source-drain diode current

T

C

= 25 °C

I

S

-54.8

T

A

= 25 °C -4.2

b, c

Single pulse avalanche current

L = 0.1 mH

I

AS

-20

Single pulse avalanche energy E

AS

20 mJ

Maximum power dissipation

T

C

= 25 °C

P

D

65.8

W

T

C

= 70 °C 42.1

T

A

= 25 °C 5.1

b, c

T

A

= 70 °C 3.2

b, c

Operating junction and storage temperature range T

J

, T

stg

-55 to +150

°C

Soldering recommendations (peak temperature)

c

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum junction-to-ambient

b

t  10 s R

thJA

20 25

°C/W

Maximum junction-to-case (drain) Steady state R

thJC

1.5 1.9

SiR165DP

www.vishay.com

Vishay Siliconix

S18-0208-Rev. A, 19-Feb-18

2

Document Number: 75969

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

DS

V

GS

= 0 V, I

D

= -250 μA -30 - - V

V

DS

temperature coefficient V

DS

/T

J

I

D

= -10 mA - -24 -

mV/°C

V

GS(th)

temperature coefficient V

GS(th)

/T

J

I

D

= -250 μA - 4.3 -

Gate-source threshold voltage V

GS(th)

V

DS

= V

GS

, I

D

= -250 μA -1 - -2.3 V

Gate-source leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - 100 nA

Zero gate voltage drain current I

DSS

V

DS

= -30 V, V

GS

= 0 V - - -1

μA

V

DS

= -30 V, V

GS

= 0 V, T

J

= 70 °C - - -15

On-state drain current

a

I

D(on)

V

DS

 -10 V, V

GS

= -10 V -30 - - A

Drain-source on-state resistance

a

R

DS(on)

V

GS

= -10 V, I

D

= -15 A - 0.0038 0.0046



V

GS

= -4.5 V, I

D

= -10 A - 0.0062 0.0075

Forward transconductance

a

g

fs

V

DS

= -15 V, I

D

= -20 A - 62 - S

Dynamic

b

Input capacitance C

iss

V

DS

= -15 V, V

GS

= 0 V, f = 1 MHz

- 4930 -

pFOutput capacitance C

oss

- 575 -

Reverse transfer capacitance C

rss

- 516 -

Total gate charge Q

g

V

DS

= -15 V, V

GS

= -10 V, I

D

= -25.9 A - 92 138

nC

V

DS

= -15 V, V

GS

= -4.5 V, I

D

= -25.9 A

-4466

Gate-source charge Q

gs

-12-

Gate-drain charge Q

gd

-14-

Gate resistance R

g

f = 1 MHz 0.32 1.6 3.2 

Turn-on delay time t

d(on)

V

DD

= -15 V, R

L

= 0.73 , I

D

 -20.7 A,

V

GEN

= -10 V, R

g

= 1 

-2040

ns

Rise time t

r

-2550

Turn-off delay time t

d(off)

-4570

Fall time t

f

-1836

Turn-on delay time t

d(on)

V

DD

= -15 V, R

L

= 0.73 , I

D

 -20.7 A,

V

GEN

= -4.5 V, R

g

= 1 

-2550

Rise time t

r

-3060

Turn-off delay time t

d(off)

-4570

Fall time t

f

-2244

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

S

T

C

= 25 °C - - -54.8

A

Pulse diode forward current I

SM

- - -120

Body diode voltage V

SD

I

S

= -5 A, V

GS

= 0 V - -0.73 -1.2 V

Body diode reverse recovery time t

rr

I

F

= -20.7 A, di/dt = 100 A/μs,

T

J

= 25 °C

-4080ns

Body diode reverse recovery charge Q

rr

-4590nC

Reverse recovery fall time t

a

- 19.5 -

ns

Reverse recovery rise time t

b

- 20.5 -

SiR165DP

www.vishay.com

Vishay Siliconix

S18-0208-Rev. A, 19-Feb-18

3

Document Number: 75969

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

10

100

1000

10000

0

30

60

90

120

0 0.5 1 1.5 2

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

2nd line

V

GS

= 10 V thru 4 V

V

GS

= 3 V

10

100

1000

10000

0

0.003

0.006

0.009

0.012

0306090120

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

2nd line

V

GS

=4.5 V

V

GS

= 10 V

10

100

1000

10000

0

2

4

6

8

10

020406080100

Axis Title

1st line

2nd line

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

2nd line

V

DS

= 15 V

V

DS

= 8 V

V

DS

= 24 V

I

D

=25.9A

10

100

1000

10000

0

30

60

90

120

012345

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

2nd line

T

C

= 25 °C

T

C

=-55 °C

T

C

= 125 °C

10

100

1000

10000

0

1400

2800

4200

5600

7000

0 6 12 18 24 30

Axis Title

1st line

2nd line

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

2nd line

C

rss

C

oss

C

iss

10

100

1000

10000

0.6

0.8

1.0

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

2nd line

V

GS

= 10 V, I

D

= 15 A

V

GS

= 4.5 V, 10 A

SIR165DP-T1-GE3

SIR165DP-T1-GE3

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