DF3A6.8CT
2014-03-01
1
TOSHIBA Diodes for Protecting against ESD
DF3A6.8CT
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
*This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
z The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Power dissipation P 150* mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
*: Mounted on FR4 board (10 mm × 10 mm × 1 mm(t))
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Zener voltage V
Z
I
Z
= 5 mA 6.4 6.8 7.2 V
Dynamic impedance Z
Z
I
Z
= 5 mA ― ― 25 Ω
Reverse current I
R
V
R
= 5 V ― ― 0.5 μA
Terminal capacitance
(between Cathode and Anode)
C
T
V
R
= 0 V, f = 1 MHz
― 45 ― pF
JEDEC
―
JEITA
―
TOSHIBA
1-1S1C
Weight: 0.75 mg (typ.)
Unit: mm
CST3
1.CATHODE1
2.CATHODE2
3.ANODE
Start of commercial production
2004-08
