DG4599DL-T1-E3-HF

Vishay Siliconix
DG4599
Document Number: 72218
S-70852-Rev. C, 30-Apr-07
www.vishay.com
1
Low-Voltage Single-Supply, SPDT Analog Switch in SC-70
FEATURES
6-Pin SC-70 Package
60 Ω Max. (26 Typ.) On-Resistance
•2 Ω Typ. R
ON
Flatness
Fast Switching: t
ON
= 30 ns (Max.)
t
OFF
= 25 ns (Max.)
2.25 V to 5.5 V Single Supply Operation
Break-Before-Make Switching
TTL/CMOS-Logic Compatible
BENEFITS
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
APPLICATIONS
Battery-Operated Equipment
Audio and Video Signal Routing
Cellular Phones
Low-Voltage Data-Acquistion Systems
Sample-and-Hold Circuits
Communications Systems
DESCRIPTION
The DG4599 is a cost effective upgrade to other types of
4599 low-voltage, single-pole/double-throw analog switches
available in the industry today.
Combining low power, high speed, low on-resistant and
small physical size, the DG4599 is ideal for portable and bat-
tery powered applications.
The DG4599 is built on Vishay Siliconix’s low voltage CMOS
process. An epitaxial layer prevents latchup. Break-before -
make is guaranteed for DG4599.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic "0" 0.8 V
Logic "1" 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply
NO (Source
1
)
COM
NC (Source
2
)
1
2
3
6
5
Top View
IN
V+
GND
4
SC-70
Device Marking: 4J
TRUTH TABLE
Logic NC NO
0ONOFF
1OFFON
ORDERING INFORMATION
Temp Range Package Part Number
- 40 to 85 °C SC70-6
DG4599DL-T1
DG4599DL-T1-E3
Available
Pb-free
RoHS*
COMPLIANT
www.vishay.com
2
Document Number: 72218
S-70852-Rev. C, 30-Apr-07
Vishay Siliconix
DG4599
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/°C above 25 °C.
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
Referenced V+ to GND - 0.3 to + 6
V
IN, COM, NC, NO
a
- 0.3 to (V+ + 0.3)
Continuous Current (Any Terminal) ± 50
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 200
Storage Temperature (D Suffix) - 65 to 125 °C
Power Dissipation (Packages)
b
6-Pin SO70
c
250 mW
SPECIFICATIONS (V+ = 5 V)
Parameter Symbol
Test Conditions
Otherwise Unless Specified
V+ = 5 V, ± 10 %, V
IN
= 0.8 or 2.4 V
e
Temp
a
Limits
- 40 to 85 °C
Unit Min
b
Typ
c
Max
b
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
V
COM
Full 0 V+ V
Drain-Source On-Resistance
r
DS(on)
V+ = 4.5 V, V
D
= 3 V, I
S
= 10 mA
Room
Full
7
10
60
65
Ω
r
DS(on)
Flatness
d
r
DS(on)
Flatness
V+ = 2.5 V Room 2
Switch Off Leakage Current
I
S(off)
V+ = 5.5 V
V
S
= 1 V/4.5 V, V
D
= 4.5 V/1 V
Room
Full
- 1.0
- 4.0
1.0
4.0
nA
I
D(off)
Room
Full
- 1.0
- 4.0
1.0
4.0
Channel-On Leakage Current
I
D(on)
V+ = 5.5 V, V
S
= V
D
= 1 V/4.5 V
Room
Full
- 1.0
- 3.0
1.0
4.5
Digital Control
Input High Voltage
V
INH
Full 2.4
V
Input Low Voltage
V
INL
Full 0.8
Input Capacitance
C
in
Full 3 pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full - 1 1 µA
Dynamic Characteristics
Tur n - O n T i m e
d
t
ON
V
D
or V
S
= 3 V, R
L
= 300 Ω, C
L
= 35 pF
Figures 1 and 2
Room
Full
930
40
ns
Turn-Off Time
d
t
OFF
Room
Full
525
30
Break-Before-Make Time
d
t
d
Room 1 4
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
S
= 0 V
V
GEN
= 0 V, R
GEN
= 0 Ω, Figure 3
Room 5 10 pC
Off-Isolation
d
OIRR
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz
Room - 73
dB
Crosstalk
d
X
TAL K
Room - 70
Source-Off Capacitance
d
C
S(off)
V
IN
= 0 or V+, f = 1 MHz
Room 7
pF
Channel-On Capacitance
d
C
D(on)
Room 20
Drain-to-Source Capacitance
d
C
DS(off)
Room 20
Power Supply
Power Supply Range V+ 4.5 5.5 V
Power Supply Current I+
V
IN
= 0 or V+
0.01 1.0 µA
Power Consumption
P
C
5.5 µW
Document Number: 72218
S-70852-Rev. C, 30-Apr-07
www.vishay.com
3
Vishay Siliconix
DG4599
SPECIFICATIONS (V+ = 3 V)
Parameter Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V
IN
= 0.4 or 2.0 V
e
Temp
a
Limits
- 40 to 85 °C
Unit Min
b
Typ
c
Max
b
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
V
COM
Full 0 V+ V
Drain-Source On-Resistance
d
r
DS(on)
V+ = 2.7 V, V
D
= 1.5 V, I
S
= 10 mA
Room
Full
15
19
95
105
Ω
r
DS(on)
Flatness
d
r
DS(on)
Flatness
V
S
= 0 to V+, I
S
= 10 mA
Room 7.5
Digital Control
Input High Voltage
V
INH
Full 2
V
Input Low Voltage
V
INL
Full 0.8
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full - 1 1 µA
Dynamic Characteristics
Tu r n - O n T im e
d
t
ON
V
D
or V
S
= 2.0 V, R
L
= 300 Ω, C
L
= 35 pF
Figures 1 and 2
Room
Full
12 45
55
ns
Turn-Off Time
d
t
OFF
Room
Full
635
40
Break-Before-Make Time
d
t
d
Room 1 7
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, V
S
= 0 V
R
GEN
= 0 Ω, Figure 3
Room 5 10 pC
Power Supply
Power Supply Range V+ 2.7 3.3 V
Power Supply Current I+
V
IN
= 0 or V+
0.01 1.0 µA
Power Consumption
P
C
3.3 µW

DG4599DL-T1-E3-HF

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs LOW-VOLTAGE, SINGLE SUPPLY, SPDT AS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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