2SD2170
Transistors
Medium Power Transistor
(Motor, Relay drive) (90 , 2A)
2SD2170
!
Features
1) Built-in zener diode between collector and base.
2) Zener diode has low dispersion.
3) Strong protection against reverse power surges due to
"L" loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
!
!!
!
External dimensions
(Units : mm)
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(
3
)
4.5
(
1
)
(
2
)
0.5
4.0
2.5
1.0
ROHM : MPT3
!
!!
!
Absolute maximum ratings
(Ta=25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
90
90
+20
+20
−10
−10
6
2
3
2
*
1
*
2
150
−55~+150
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
1 Single pulse Pw = 10ms , Duty = 1 / 2
*
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
!
Packaging specifications and h
FE
!
!!
!
Equivalent circuit
Type 2SD2170
MPT3
1k~10k
T100
1000
DM
Package
h
FE
Code
Basic ordering unit (pieces)
Marking
R
2
R
1
E
B
C
C
B
E
: Emitter
: Base
: Collector
R
1
3.5kΩ
R
2
300 Ω
!
!!
!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
I
CBO
I
EBO
h
FE
f
T
Cob
80
80
-
-
1000
-
-
-
-
-
-
-
80
25
110
110
10
3
10000
-
-
V
V
µA
mA
-
*
1
*
2
*
1
MHz
pF
I
C
= 50µA
I
C
= 1mA
V
CB
= 70V
V
EB
= 5V
V
CE(sat)
- - 1.5 V I
C
/I
B
= 1A/1mA
V
CE
= 2V , I
C
= 1A
V
CE
= 5V , I
E
= −0.1A , f = 30MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Collector-emitter saturation voltage
*
1 Measured using pulse current.
*
2 Transition frequency of the device.
+20
−10
