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NSR15DW1T1

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 2
1 Publication Order Number:
NSR15DW1/D
NSR15DW1
Dual RF Schottky Diode
These diodes are designed for analog and digital applications,
including DC based signal detection and mixing applications.
Features
• Low Capacitance (<1 pF)
• Low V
F
(390 mV typical @ 1 mA)
• Low V
F
D
(1 mV typical @ 1 mA)
• Pb−Free Package is Available
Benefits
• Reduced Parasitic Losses
• Accurate Signal Measurement
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Reverse Voltage V
R
15 V
Forward Current I
F
30 mA
Operating and Storage Temperature Range T
J
, T
stg
−65 to +150 °C
ESD Rating: Class 1 per Human Body Model
ESD Rating: Class A per Machine Model
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance,
Junction−to−Ambient
R
q
JA
500 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
RF SCHOTTKY
BARRIER DIODES
15 VOLTS, 30 mA
MARKING DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
NSR15DW1T1 SC−88 3000/Tape & Ree
l
SC−88
CASE 419B
STYLE 21
R5 = Specific Device Code
M = Date Code
G = Pb−Free Package
R5 M G
G
123
654
http://onsemi.com
NSR15DW1T1G SC−88
(Pb−Free)
3000/Tape & Ree
l
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
1
1
NSR15DW1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Breakdown Voltage (I
R
= 10 mA)
V
BR
15 20 − V
Reverse Leakage (V
R
= 1 V) I
R
− 2 50 nA
Forward Voltage (I
F
= 1 mA) V
F1
− 390 415 mV
Forward Voltage (I
F
= 10 mA) V
F2
− 530 680 mV
Delta V
F
(I
F
= 1 mA, All Diodes)
DV
F
− 1 15 mV
Capacitance (V
F
= 0 V, f = 1 MHz) C
T
− 0.8 1 pF
Figure 1. Forward Current versus Forward
Voltage at Temperatures
V
F
, FORWARD VOLTAGE (V)
100
10
1
0.1
0.70.60.50.40.30.20.10
Figure 2. Reverse Current versus Reverse
Voltage
V
R
, REVERSE VOLTAGE (V)
1
5
1050
10 k
1 k
100
10
1
0.01
100 k
I
F
, FORWARD CURRENT (mA)
I
R
, REVERSE CURRENT (nA)
Figure 3. Total Capacitance versus Reverse
Voltage
V
R
, REVERSE VOLTAGE (V)
1
0.9
0.7
0.6
86543210
Figure 4. Dynamic Resistance versus Forward
Current
I
F
, FORWARD CURRENT (mA)
10
0
1010.1
100
10
1
0.5
1000
C
T
, CAPACITANCE (pF)
R
D
, DYNAMIC RESISTANCE (W)
7
0.8
125°C −25°C
75°C
25°C
125°C
75°C
25°C
NSR15DW1
http://onsemi.com
3
Figure 5. Typical V
F
Match at Mixer Bias Levels
V
F
, FORWARD VOLTAGE (V)
100
10
1
0.1
0.70.60.50.40.3 0.8
Figure 6. Typical V
F
Match at Detector Bias Levels
V
F
, FORWARD VOLTAGE (V)
0.2250.175
100
10
I
F
, FORWARD CURRENT (mA)
I
F
, FORWARD CURRENT (mA)
DV
F
, FORWARD VOLTAGE DIFFERENCE (mV)
0.275 0.325
1
0.1
1
10
DV
F
, FORWARD VOLTAGE DIFFERENTIAL (mV)
I
F
(left scale)
DV
F
(right scale)
0.1
1
10
100
I
F
(left scale)
DV
F
(right scale)
Figure 7. Typical Output Voltage versus Input Power,
Small Signal Detector Operating at 850 MHz
P
in
, INPUT POWER (dBm)
1
0.1
0.01
0−5−15−20−25−30−35−40
Figure 8. Typical Output Voltage versus Input
Power, Large Signal Detector Operating at 915 MH
z
P
in
, INPUT POWER (dBm)
15105−20
1
0.1
0.01
0.001
0.000001
0.001
10
V
DET
, (Vdc)
Figure 9. Typical Conversion Loss versus L.O. Drive,
2.0 GHz
LOCAL OSCILLATOR POWER (dBm)
12
10
8
7
1286420−2
6
CONVERSION LOSS (dB)
10
9
−10 −15 −10 −5 0 3
0
2520
0.0001
0.00001
V
DET
, (Vdc)
18 nH
3.3 nH
V
O
RF IN
100 pF
100 kW
NSR15DW1
68 W
V
O
RF IN
100 pF
4.7 kW
NSR15DW1
DC Bias = 3 mA
P1-P3P4-P4

NSR15DW1T1

Mfr. #:
Buy NSR15DW1T1
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 15V 30mA
Lifecycle:
New from this manufacturer.
Delivery:
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