AOW298

AOW298
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 4 8 12 16 20
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
400
800
1200
1600
2000
0 20 40 60 80 100
Capacitance (pF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
0
200
400
600
800
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
C
oss
C
rss
V
DS
=50V
I
D
=20A
T
J(Max)
=175°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
I
D
(Amps)
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
T
J(Max)
=175°C
T
C
=25°C
100
µ
s
40
for (Note F)
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10
Z
θ
JC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Area (Note F)
R
θJC
=1.5°C/W
Rev.1.0: August 2016 www.aosmd.com Page 4 of 6
AOW298
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
30
60
90
120
0 25 50 75 100 125 150 175
Power Dissipation (W)
T
CASE
(
°
C)
Figure 18: Power De-rating (Note F)
0
20
40
60
80
0 25 50 75 100 125 150 175
Current rating I
D
(A)
T
CASE
(
°
C)
Figure 17: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 20: Single Pulse Power Rating Junction
-
to
-
T
A
=25°C
10
100
1 10 100
I
AR
(A) Peak Avalanche Current
Time in avalanche, t
A
(
µ
s)
Figure 19: Single Pulse Avalanche capability
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
40
0.001
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100 1000
Z
θ
JA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 21: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 20: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
R
θJA
=60°C/W
Figure 19: Single Pulse Avalanche capability
(Note C)
Rev.1.0: August 2016 www.aosmd.com Page 5 of 6
AOW298
AOW298
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs
Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VD C
DUT
Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev.1.0: August 2016 www.aosmd.com Page 6 of 6

AOW298

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH 100V 9A TO262
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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