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Vishay Siliconix
S15-2366-Rev. A, 12-Oct-15
1
Document Number: 76397
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 40 V (D-S) MOSFET
Marking Code: 9F
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
c
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
V
DS
(V) -40
R
DS(on)
(Ω) at V
GS
= -10 V 0.075
R
DS(on)
(Ω) at V
GS
= -4.5 V 0.145
I
D
(A) -4.6
Configuration Single
Package SOT-23
Top View
SOT-23 (TO-236)
1
G
2
S
D
3
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-40
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
-4.6
A
T
C
= 125 °C -2
Continuous Source Current (Diode Conduction) I
S
-2.2
Pulsed Drain Current
a
I
DM
-18
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
-13
Single Pulse Avalanche Energy E
AS
8.4 mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
2.5
W
T
C
= 125 °C 0.5
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
b
R
thJA
166
°C/W
Junction-to-Foot (Drain) R
thJF
50