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IRLR3715ZTRR
P1-P3
P4-P6
P7-P9
P10-P12
IRLR/U3715Z
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rai
n-t
o-Source V
ol
tage (
V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1
MHZ
C
iss
=
C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
SD
, S
ource-
to-
Dr
ai
n Vol
tage (V)
0.10
1.00
10.00
100.00
1000.00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
V
DS
, D
rai
n-t
o-Source V
ol
tage (
V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
Tc =
25°C
Tj
= 175°C
Si
ngl
e Pul
se
02468
1
0
Q
G
Tot
al
Gat
e Char
ge (nC
)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 16V
V
DS
= 10V
I
D
= 12A
IRLR/U3715Z
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
25
50
75
100
125
150
175
T
C
, C
ase Tem
perat
ure (
°C
)
0
10
20
30
40
50
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limi
ted By P
ackage
-75
-50
-25
0
25
50
75
100
125
150
175
200
T
J
, T
emper
atur
e ( °
C
)
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
1
, R
ectangul
ar
Pul
se Dur
at
ion (
sec)
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.
50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Not
es
:
1. D
uty
factor D
=
t / t
2. Peak T
=
P
x Z
+ T
1
2
J
DM
th
J
C
C
P
t
t
DM
1
2
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/
Ri
Ci=
τ
i
/
Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W)
τ
i (sec)
1.1512 0.000082
2.2284 0.000897
0.3256 0.053599
0.0448 0.074119
IRLR/U3715Z
6
www.irf.com
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
T
ype
as
D.U.T
.
Current
Sampling
Resistors
+
-
Fig 13.
Gate Charge Test Circuit
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
25
50
75
100
125
150
175
St
art
i
ng T
J
, Junct
i
on Tem
perat
ure (
°C
)
0
10
20
30
40
50
60
70
80
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TO
P 4.2A
6.9A
BO
TTOM
1
2
A
Fig 14a.
Switching Time Test Circuit
Fig 14b.
Switching Time Waveforms
V
GS
Pu
ls
e Wi
dth
< 1µs
Dut
y Fac
tor <
0.1%
V
DD
V
DS
L
D
D.
U.T
V
GS
V
DS
90%
10%
t
d(
o
n)
t
d(off)
t
r
t
f
P1-P3
P4-P6
P7-P9
P10-P12
IRLR3715ZTRR
Mfr. #:
Buy IRLR3715ZTRR
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 20V 49A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
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