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IXYH20N65C3

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA20N65C3
IXYH20N65C3
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45 50
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
V
CE
= 10V
Fig. 10. Reverse-Bias Safe Operating Area
0
10
20
30
40
100 200 300 400 500 600 700
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 20
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 4 8 121620242832
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 325V
I
C
= 20A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
ies
C
oes
C
res
Fig. 11. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
10ms
V
CE(sat)
Limi
t
100µs
DC
Fig. 12. Maximum Transient Thermal Impedance (IGBT)
0.01
0.1
1
1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Pulse Width - Second
Z
(th)JC
- ºC / W
D = t
p
/ T
t
p
T
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
© 2015 IXYS CORPORATION, All Rights Reserved
IXYA20N65C3
IXYH20N65C3
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
20 30 40 50 60 70 80 90 100
R
G
- Ohms
E
off
- MilliJoules
0
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 20A
I
C
= 40A
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
20
25
30
35
40
45
50
55
20 30 40 50 60 70 80 90 100
R
G
- Ohms
t
f i
- Nanoseconds
60
90
120
150
180
210
240
270
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 20A
I
C
= 40A
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
10 15 20 25 30 35 40
I
C
- Amperes
E
off
- MilliJoules
0.0
0.4
0.8
1.2
1.6
2.0
2.4
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 20
Ω
,
V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 20
Ω ,
V
GE
= 15V
V
CE
= 400V
I
C
= 20A
I
C
= 40A
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
20
25
30
35
40
45
50
55
10 15 20 25 30 35 40
I
C
- Amperes
t
f i
- Nanosecond
s
60
70
80
90
100
110
120
130
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 20
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
20
24
28
32
36
40
44
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanosecond
s
64
72
80
88
96
104
112
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 20
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 20A
I
C
= 40A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA20N65C3
IXYH20N65C3
IXYS REF: IXY_20N65C3(3D)1-21-15-B
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
0
10
20
30
40
50
60
70
80
90
100
10 15 20 25 30 35 40
I
C
- Amperes
t
r i
- Nanosecond
s
10
12
14
16
18
20
22
24
26
28
30
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 20
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanosecond
s
10
14
18
22
26
30
34
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 20
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 40A
I
C
= 20A
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
280
20 30 40 50 60 70 80 90 100
R
G
- Ohms
t
r i
- Nanosecond
s
0
20
40
60
80
100
120
140
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 40A
I
C
= 20A
Fig. 22. Cauer Thermal Network
i Ri (°C/W) Ci (J/°C)
1 0.170320 0.0017715
2 0.136990 0.0166820
3 0.090011 0.0391660
P1-P3P4-P6

IXYH20N65C3

Mfr. #:
Buy IXYH20N65C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT XPT-GENX3
Lifecycle:
New from this manufacturer.
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