2 www.irf.com © 2013 International Rectifier April 30, 2013
AUIRFS8409-7P
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 240A by source
bonding technology. Note that current limitations arising from
heating of the device leads may occur with some lead mounting
arrangements.(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.153mH, R
G
= 50Ω,
I
AS
= 100A, V
GS
=10V. Part not recommended for use above
this value.
I
SD
≤ 100A, di/dt ≤ 1403A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
S
D
G
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
Pulse drain current is limited by source bonding technology.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
V
( B R) DSS
/
T
J
Breakdown Voltage Temp. Coefficient ––– 0.026 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 0.55 0.75
m
Ω
V
GS(th)
Gate Threshold Voltage 2.2 3.0 3.9 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 2.2 –––
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 176 ––– ––– S
Q
g
Total Gate Charge ––– 305 460
Q
gs
Gate-to-Source Charge ––– 84 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 96 –––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
) ––– 209 –––
t
d(on)
Turn-On Delay Time ––– 32 –––
t
r
Rise Time ––– 148 –––
t
d(off)
Turn-Off Delay Time ––– 149 –––
t
f
Fall Time ––– 107 –––
C
iss
Input Capacitance ––– 13975 –––
C
oss
Output Capacitance ––– 2140 –––
C
rss
Reverse Transfer Capacitance ––– 1438 –––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
––– 2620 –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
––– 3306 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
V
SD
Diode Forward Voltage ––– 0.8 1.2 V
dv/dt
Peak Diode Recovery
–––
1.6
––– V/ns
t
rr
Reverse Recovery Time ––– 50 ––– T
J
= 25°C V
R
= 34V,
–––58––– T
J
= 125°C I
F
= 100A
Q
rr
Reverse Recovery Charge ––– 59 ––– T
J
= 25°C
–––72––– T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 2.2 ––– A T
J
= 25°C
T
J
= 175°C, I
S
= 100A, V
DS
= 40V
ns
nC
A
–––
–––
–––
–––
522
1200
μA
nA
nC
ns
pF
V
DS
= 10V, I
D
= 100A
I
D
= 100A
V
GS
= 20V
V
GS
= -20V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V,V
DS
=0V to 32V , See Fig. 11
I
D
= 100A
R
G
= 2.7
V
GS
= 10V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 2mA
V
GS
= 10V, I
D
= 100A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
DS
=20V
V
DD
= 20V
I
D
= 100A, V
DS
=0V, V
GS
= 10V
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
integral reverse
V
GS
= 0V, V
DS
= 0V to 32V
MOSFET symbol
V
GS
= 10V
