APTGL60TL120T3G Datasheet APTGL60TL120T3G | P1-P3

APTGL60TL120T3G

APTGL60TL120T3G – Rev 2 November, 2017

www.microsemi.com

1-7

All ratings @ T

j

= 25°C unless otherwise specified

Q1 to Q4 Absolute maximum ratings (per IGBT)

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Voltage 1200 V

I

C

Continuous Collector Current

T

C

= 25°C

80

A

T

C

= 80°C

60

I

CM

Pulsed Collector Current T

C

= 25°C 100

V

GE

Gate – Emitter Voltage ±20 V

P

D

Power Dissipation T

C

= 25°C 280 W

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

All multiple inputs and outputs must be shorted together

Example: 10/11/12 ; 7/8 …

V

CES

= 1200V

I

C

= 60A @ Tc = 80°C

Application

 Solar converter

 Uninterruptible Power Supplies

Features

 Trench + Field Stop IGBT 4

- Low voltage drop

- Low leakage current

- Low switching losses

 Kelvin emitter for easy drive

 Very low stray inductance

 High level of integration

 Internal thermistor for temperature monitoring

Benefits

 Stable temperature behavior

 Very rugged

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Low profile

 RoHS Compliant

Three level inverter

Trench + Field Stop IGBT4

APTGL60TL120T3G

APTGL60TL120T3G – Rev 2 November, 2017

www.microsemi.com

2-7

Q1 to Q4 Electrical Characteristics (per IGBT)

Symbol Characteristic Test Conditions Min Typ Max Unit

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 1200V 1 mA

V

CE(sat)

Collector Emitter saturation Voltage

V

GE

= 15V

I

C

= 50A

T

j

= 25°C 1.8 2.2

V

T

j

= 150°C 2.2

V

GE

(

th

)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 1.6mA 5.0 5.8 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 400 nA

Q1 to Q4 Dynamic Characteristics (per IGBT)

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz

2770

pF

C

oes

Output Capacitance 205

C

res

Reverse Transfer Capacitance 160

Q

G

Gate charge

V

GE

= ±15V ; V

CE

=600V

I

C

=50A

0.38 µC

T

d(on)

Turn-on Delay Time

Inductive Switching (25°C)

V

GE

= ±15V

V

CE

= 600V

I

C

= 50A

R

G

= 8.2

50

ns

T

r

Rise Time 27

T

d(off)

Turn-off Delay Time 270

T

f

Fall Time 70

T

d(on)

Turn-on Delay Time

Inductive Switching (150°C)

V

GE

= ±15V

V

CE

= 600V

I

C

= 50A

R

G

= 8.2

50

ns

T

r

Rise Time 30

T

d(off)

Turn-off Delay Time 290

T

f

Fall Time 80

E

on

Turn-on Switching Energy

V

GE

= ±15V

V

CE

= 600V

I

C

= 50A

R

G

= 8.2

T

J

= 25°C 3.8

mJ

T

J

= 150°C 5.5

E

off

Turn-off Switching Energy

T

J

= 25°C 2.5

mJ

T

J

= 150°C 4.5

I

sc

Short Circuit data

V

GE

≤15V ; V

Bus

= 900V

t

p

≤10µs ; T

j

= 150°C

200 A

R

thJC

Junction to Case Thermal Resistance 0.53 °C/W

APTGL60TL120T3G

APTGL60TL120T3G – Rev 2 November, 2017

www.microsemi.com

3-7

CR1 to CR6 diode ratings and characteristics (per diode)

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Peak Repetitive Reverse Voltage 1200 V

I

RM

Reverse Leakage Current V

R

=600V 100 µA

I

F

DC Forward Current

Tc = 80°C 30 A

V

F

Diode Forward Voltage

I

F

= 30A 2.6 3.1

I

F

= 60A 3.2

V

I

F

= 30A T

j

= 125°C 1.8

t

rr

Reverse Recovery Time

I

F

= 30A

V

R

= 800V

di/dt =200A/µs

T

j

= 25°C 300

ns

T

j

= 125°C 380

Q

rr

Reverse Recovery Charge

T

j

= 25°C 360

nC

T

j

= 125°C 1700

E

rr

Reverse Recovery Energy

I

F

= 30A

V

R

= 800V

di/dt =1000A/µs

T

j

= 125°C 1.6 mJ

R

thJC

Junction to Case Thermal Resistance

1.2 °C/W

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

∆R

25

/R

25

5

%

B

25/85

T

25

= 298.15 K 3952

K

∆B/B T

C

=100°C 4

%





























TT

B

R

T

11

exp

25

85/25

25

Thermal and package characteristics

Symbol Characteristic Min Max Unit

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V

T

J

Operating junction temperature range -40 175

°C

T

JOP

Recommended junction temperature under switching conditions -40 T

J

max -25

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 125

Torque Mounting torque To heatsink M4 2 3 N.m

Wt Package Weight

110

g

T: Thermistor temperature

R

T

: Thermistor value at T

APTGL60TL120T3G

APTGL60TL120T3G

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