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CZRL5246B

P1-P3P4-P6P7-P9
www.vishay.com Document Number: 91241
4 S11-0443-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFPC50A, SiHFPC50A
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
1
10
100
1000
10000
100000
1 10 100 1000
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
1000
10 100 1000 1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Document Number: 91241 www.vishay.com
S11-0443-Rev. B, 14-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFPC50A, SiHFPC50A
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
25 50 75 100 125 150
0
2
4
6
8
10
12
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
www.vishay.com Document Number: 91241
6 S11-0443-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFPC50A, SiHFPC50A
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanche Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
A
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
Driver
A
15 V
20 V
t
p
V
DS
I
AS
25 50 75 100 125 150
0
400
800
1200
1600
2000
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
4.9A
7.0A
11A
650
660
670
680
690
700
710
720
730
012345678910111213
DSav
av
I , Avalanche Current (A)
V , Avalanche Voltage (V)
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
D.U.T.
V
DS
I
D
I
G
3 mA
V
GS
0.3 µF
50 kΩ
0.2 µF
12 V
Current regulator
Same type as D.U.T.
Current sampling resistors
+
-
P1-P3P4-P6P7-P9

CZRL5246B

Mfr. #:
Buy CZRL5246B
Manufacturer:
Comchip Technology
Description:
Zener Diodes 0.5W, 16V/7.8mA
Lifecycle:
New from this manufacturer.
Delivery:
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