Product Standards
Zener Diode
DZ6J068S0R
Absolute Maximum Ratings Ta = 25 C
*1:
Mounted on glass epoxy print board. ( 45 mm x 45 mm x 1 mm)
(4 Diode total)
Solder in ( 0.4 mm x 0.8 mm)
*2:
Electrical Characteristics Ta = 25 C 3 C
1.
2. *1: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranted 20 ms after current flow.
*3: Tj = 25°C to 150°C
Page
Note)
Test method:IEC61000_4_2(C = 150 pF,R = 330 , Contact discharge:10 times)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
60
Zener rise operating resistance RZK IZ = 0.5 mA
Internal Connection
3.1 mV/°C
V
30
6.46
Max
7.14
1.0 V
UnitParameter Symbol Conditions
Forward voltage VF IF = 10 mA
kV
Junction temperature Tj 150 °C
Electrostatic discharge
*2
ESD ±10
1of4
Unit: mm
Min Typ
4. Cathode3
5. Cathode4
SMini6-F3-B
JEITA SC-113DB
6. Anode1,23. Anode3,4
Low zener operating resistance Rz
Excellent rising characteristics of zener current Iz
Halogen-free / RoHS compliant
DZ6J068S0R
Silicon epitaxial planar type
For surge absorption circuit
Features
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol
12
Code
1. Cathode1
2. Cathode2
SOT-363
Panasonic
Parameter Symbol Rating Unit
Packaging
Embossed type (Thermo-compression sealing) 3 000 pcs / reel (standard)
Temperature coefficient of zener voltage
*3
SZ IZ = 5 mA
Zener voltage
*1, *2
VZ IZ = 5 mA
Zener operating resistance RZ IZ = 5 mA
Reverse current
°C
°CStorage temperature Tstg -55 to +150
Total power dissipation
*1
PT 150
Topr -40 to +85
Basic Part Number :
Dual DZ3X068D (Individual)
0.1 μAIR VR = 4 V
mW
Operating ambient temperature
2.1
2.0
0.7
1.25
0.130.2
1.3
(0.65)(0.65)
123
456
123
654
