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NSBC113EDXV6T1G

P1-P3P4-P6
Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1 Publication Order Number:
DTC113ED/D
MUN5230DW1,
NSBC113EDXV6
Dual NPN Bias Resistor
Transistors
R1 = 1 kW, R2 = 1 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25C, common for Q
1
and Q
2
, unless otherwise noted)
Rating
Symbol Max Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current − Continuous I
C
100 mAdc
Input Forward Voltage V
IN(fwd)
10 Vdc
Input Reverse Voltage V
IN(rev)
10 Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device Package Shipping
†
MUN5230DW1T1G,
SMUN5230DW1T1G
SOT−363 3,000/Tape & Reel
NSBC113EDXV6T1G SOT−563 4,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
MARKING DIAGRAMS
PIN CONNECTIONS
7G M G
G
1
6
7G M G
G
1
7G = Specific Device Code
M = Date Code*
G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
SOT−363
CASE 419B
SOT−563
CASE 463A
Q
1
Q
2
(1)(2)(3)
(6)(5)(4)
R
1
R
2
R
2
R
1
MUN5230DW1, NSBC113EDXV6
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
MUN5230DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25C (Note 1)
(Note 2)
Derate above 25C (Note 1)
(Note 2)
P
D
187
256
1.5
2.0
mW
mW/C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
R
q
JA
670
490
C/W
MUN5230DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
T
A
= 25C (Note 1)
(Note 2)
Derate above 25C (Note 1)
(Note 2)
P
D
250
385
2.0
3.0
mW
mW/C
Thermal Resistance,
Junction to Ambient (Note 1)
(Note 2)
R
q
JA
493
325
C/W
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
R
q
JL
188
208
C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 C
NSBC113EDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25C (Note 1)
Derate above 25C (Note 1)
P
D
357
2.9
mW
mW/C
Thermal Resistance,
Junction to Ambient (Note 1)
R
q
JA
350
C/W
NSBC113EDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
T
A
= 25C (Note 1)
Derate above 25C (Note 1)
P
D
500
4.0
mW
mW/C
Thermal Resistance,
Junction to Ambient (Note 1)
R
q
JA
250
C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
MUN5230DW1, NSBC113EDXV6
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
=25C, common for Q
1
and Q
2
, unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
=50V, I
E
=0)
I
CBO
− − 100
nAdc
Collector-Emitter Cutoff Current
(V
CE
=50V, I
B
=0)
I
CEO
− − 500
nAdc
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
=0)
I
EBO
− − 4.3
mAdc
Collector-Base Breakdown Voltage
(I
C
=10mA, I
E
=0)
V
(BR)CBO
50 − −
Vdc
Collector-Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
=0)
V
(BR)CEO
50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= 5.0 mA, V
CE
=10V)
h
FE
3.0 5.0 −
Collector-Emitter Saturation Voltage (Note 4)
(I
C
= 10 mA, I
B
= 5.0 mA)
V
CE(sat)
− − 0.25
V
Input Voltage (Off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
− 1.2 −
Vdc
Input Voltage (On)
(V
CE
= 0.2 V, I
C
= 20 mA)
V
i(on)
− 1.7 −
Vdc
Output Voltage (On)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2
Vdc
Output Voltage (Off)
(V
CC
= 5.0 V, V
B
= 0.05 V, R
L
= 1.0 kW)
V
OH
4.9 − −
Vdc
Input Resistor R1 0.7 1.0 1.3
kW
Resistor Ratio R
1
/R
2
0.8 1.0 1.2
4. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle 2%.
Figure 1. Derating Curve
AMBIENT TEMPERATURE (C)
1251007550250−25−50
0
50
100
150
200
250
300
P
D
, POWER DISSIPATION (mW)
150
(1) (2)
(1) SOT−363; 1.0 1.0 Inch Pad
(2) SOT−563; Minimum Pad
350
400
P1-P3P4-P6

NSBC113EDXV6T1G

Mfr. #:
Buy NSBC113EDXV6T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
Lifecycle:
New from this manufacturer.
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