2SD2211 / 2SD1918 / 2SD1857A
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
!
Features
1) High breakdown voltage.(BV
CEO
=
160V)
2) Low collector output capacitance.
(Typ. 20pF at V
CB
=
10V)
3) High transition frequency.(f
T
=
80MH
Z
)
4) Complements the 2SB1275 / 2SB1236A.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
160
160
5
1.5
1
2
150
−55 ∼+150
Unit
V
V
V
A(DC)
3
∗2
∗3
∗1
A(Pulse)
W
W
1
10
W(Tc=25°C)
2SD1857A
2SD2211
2SD1918
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
1 Single pulse Pw=100ms
2
Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger.
3
When mounted on a 40 x 40 x 0.7mm ceramic board.
∗
∗
∗
!
Packaging specifications and h
FE
Type 2SD2211
MPT3
QR
T100
1000
2SD1918
CPT3
Q
TL
2500
2SD1857A
ATV
PQ
TV2
2500
DQ*
−−
Denotes h
FE
Package
h
FE
Code
Basic ordering unit (pieces)
Marking
*
!
External dimensions
(Units : mm)
ROHM : MPT3
EIAJ : SC-62
EIAJ : SC-63
ROHM : CPT3
ROHM : ATV
2SD1857A
2SD1918
2SD2211
1.5
(1) Base(Gate)
0.4
(2) Collector(Drain)
(3) Emitter(Source)
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(
3
)
4.5
(
1
)
(
2
)
0.5
4.0
2.5
1.0
0.45
(2) Collector
1.05
(3) Base
Taping specifications
(1) Emitter
0.5
(
1
)
0.65Max.
2.54
(
2
)
2.54
(
3
)
6.8
1.0
14.5
0.9
4.4
2.5
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(
2
)
(
3
)
C0.5
0.65
0.9
(
1
)
0.75
2.3
0.9
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
5.1
!
Electrical characteristics
(Ta = 25
°
C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
160
160
5
−
−
−
120
−
−
−
−
−
−
−
−
−
80
20
−
−
−
1
1
2
390
−
−
V
V
V
µA
µA
V
−
h
FE
82
−
270
−
2SD2211,2SD1918
2SD1857A
MHz
pF
I
C =
50µA
I
C =
1mA
I
E =
50µA
V
CB =
120V
V
EB =
4V
I
C
/I
B =
1A/0.1A
V
BE(sat)
−
−
1.5
V
I
C
/I
B =
1A/0.1A
V
CE
/I
C =
5V/0.1A
V
CE =
5V , I
E = −
0.1A , f
=
30MHz
V
CB =
10V , I
E =
0A , f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Measured using pulse current.
∗
∗
∗
