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BUK7620-100A,118

P1-P3P4-P6P7-P9P10-P12P13-P14
BUK7620-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 2 February 2011 6 of 13
NXP Semiconductors
BUK7620-100A
N-channel TrenchMOS standard level FET
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state voltage as a function of
gate-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
03nd53
0
50
100
150
200
250
0246810
V
DS
(V)
I
D
(A)
20
4.5
5.5
6.5
7.5
8
9
V
GS
(V) = 10
03nd52
12
14
16
18
20
22
5101520
V
GS
(V)
R
DSon
(mΩ)
03aa35
V
GS
(V)
0642
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
03nd50
0
20
40
60
020406080
I
D
(A)
g
fs
(S)
BUK7620-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 2 February 2011 7 of 13
NXP Semiconductors
BUK7620-100A
N-channel TrenchMOS standard level FET
Fig 9. Transfer characteristics: drain current as a
function of gate source voltage; typical values
Fig 10. Gate-source voltage as a function of turn-on
gate charge; typical values
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
03nd51
0
20
40
60
80
100
02468
V
GS
(V)
I
D
(A)
T
j
= 175 °C
T
j
= 25 °C
03nd49
0
2
4
6
8
10
0 20 40 60 80 100
Q
G
(nC)
V
GS
(V)
V
DD
= 80 VV
DD
= 14 V
T
j
(°C)
−60 180120060
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03nd54
0
10
20
30
40
50
0 50 100 150 200 250
I
D
(A)
R
DSon
(mΩ)
6
6.5
7
810
V
GS
(V) = 5.5
BUK7620-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 2 February 2011 8 of 13
NXP Semiconductors
BUK7620-100A
N-channel TrenchMOS standard level FET
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Input, output and reverse capacitances as a
function of drain-source voltage; typical values
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
03aa29
0
1
2
3
-60 0 60 120 180
T
j
(
°
C)
a
03nd55
0
2000
4000
6000
8000
10
−2
10
−1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
03nd48
0
20
40
60
80
100
120
0 0.5 1.0 1.5
V
DS
(V)
I
S
(A)
T
j
= 175 °C
T
j
= 25 °C
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK7620-100A,118

Mfr. #:
Buy BUK7620-100A,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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