© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 9
1 Publication Order Number:
NTMFS4936N/D
NTMFS4936N,
NTMFS4936NC
Power MOSFET
30 V, 79 A, Single N−Channel, SO−8 FL
Features
• Low R
DS(on)
, Low Capacitance and Optimized Gate Charge to
Minimize Conduction, Driver and Switching Losses
• Next Generation Enhanced Body Diode, Engineered for Soft
Recovery, Provides Schottky−Like Performance
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
19.5
A
T
A
= 100°C 12.3
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.62 W
Continuous Drain
Current R
q
JA
≤ 10 s
(Note 1)
T
A
= 25°C
I
D
35
A
T
A
= 100°C 22
Power Dissipation
R
q
JA
≤ 10 s (Note 1)
T
A
= 25°C P
D
8.4 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
11.6
A
T
A
= 100°C 7.3
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.92 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
79
A
T
C
=100°C 50
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
43 W
Pulsed DrainCurrent
T
A
= 25°C, t
p
= 10 ms
I
DM
235 A
Current Limited by Package T
A
= 25°C I
Dmax
100 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
39.2 A
Drain to Source DV/DT dV/d
t
6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 44 A
pk
, L = 0.1 mH, R
G
= 25 W)
E
AS
96.8 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
4936N
AYWZZ
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
3.8 mW @ 10 V
79 A
4.8 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4936NT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4936NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
NTMFS4936NCT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4936NCT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
4936N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
