WeEn Semiconductors
BT137S-600F
4Q Triac
BT137S-600F All information provided in this document is subject to legal disclaimers.
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 12 October 2016 3 / 13
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 600 V
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 102 °C; Fig. 1;
Fig. 2; Fig. 3
- 8 A
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
- 65 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms - 71 A
I
2
t I
2
t for fusing t
p
= 10 ms; SIN - 21 A²s
- 50 A/µsI
G
= 50 mA
- 50 A/µs
I
G
= 140 mA - 10 A/µs
dI
T
/dt rate of rise of on-state
current
I
G
= 50 mA - 50 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
T
mb
(°C)
- 50 1501000 50
003aae689
4
6
2
8
10
I
T(RMS)
(A)
0
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
003aae692
0
5
10
15
20
25
10
- 2
10
- 1
1 10
surge duration (s)
I
T(RMS)
(A)
f = 50 Hz
T
mb
≤ 102 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
