VS-ST330SPbF Series
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Vishay Semiconductors
Revision: 01-Mar-17
6
Document Number: 94409
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Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 1 2 5 ° C
Tj = - 4 0 ° C
(2)
(3)
In st a n t a n e o u s G a t e C u rre n t ( A )
Inst a nt an eo us G a t e Vo lt a g e (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated d i/ dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, t p = 0.66m s
D e v i c e : ST3 3 0 S Se r i e s
(4)
- Thyristor
2
- Essential part number
3
- 0 = converter grade
4
- S = compression bonding stud
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
- P = stud base 3/4"-16UNF-2A threads
7
- 0 = eyelet terminals (gate and auxiliary cathode leads)
1 = fast-on terminals (gate and auxiliary cathode leads)
9
8
Device code
51 32 4 6 7 8 9
STVS- 33 0 S 16 P 0 PbF
1 - Vishay Semiconductors product
- None = standard production
- PbF = lead (Pb)-free
M = stud base metric threads (M24 x 1.5)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95080