VS-40CTQ045PBF

VS-40CTQ045PbF, VS-40CTQ045-N3
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-11
1
Document Number: 94212
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 20 A
FEATURES
150 °C T
J
operation
Very low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
2 x 20 A
V
R
45 V
V
F
at I
F
0.48 V
I
RM
max. 115 mA at 125 °C
T
J
max. 150 °C
Diode variation Common cathode
E
AS
20 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 40 A
V
RRM
45 V
I
FSM
t
p
= 5 μs sine 1240 A
V
F
20 A
pk
, T
J
= 125 °C (per leg) 0.48 V
T
J
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-40CTQ045PbF VS-40CTQ045-N3 UNITS
Maximum DC reverse voltage V
R
45 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 116 °C, rectangular waveform
20
A
per device 40
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
1240
10 ms sine or 6 ms rect. pulse 350
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 3 A, L = 4.4 mH 20 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
3A
VS-40CTQ045PbF, VS-40CTQ045-N3
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-11
2
Document Number: 94212
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
20 A
T
J
= 25 °C
0.53
V
40 A 0.68
20 A
T
J
= 125 °C
0.48
40 A 0.67
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
3
mA
T
J
= 125 °C 115
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.27 V
Forward slope resistance r
t
8.72 m:
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 2800 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 150 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
2.0
°C/W
Maximum thermal resistance,
junction to case per package
1.0
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB 40CTQ045
VS-40CTQ045PbF, VS-40CTQ045-N3
www.vishay.com
Vishay Semiconductors
Revision: 26-Aug-11
3
Document Number: 94212
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
10
1.80.8
1.2
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0.40 0.2 0.6 1.0 1.4 1.6
1000
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
1
10
100
0.01
0.001
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
20 30 35 4525
1000
T
J
= 150 °C
10
04515
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10 000
03050
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
10 40
1000
20
T
J
= 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
100
0.01
10
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C

VS-40CTQ045PBF

Mfr. #:
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers 40 Amp 45 Volt Common Cathode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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