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Dear Customer,
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PSMN4R0-60YS
N-channel LFPAK 60 V, 4.0 mΩ standard level FET
14 May 2015 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of telecom, industrial and domestic
equipment.
2. Features and benefits
Advanced TrenchMOS provides low R
DSon
and low gate charge
High efficiency in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
3. Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
Telecom power
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 60 V
I
D
drain current T
mb
= 25 °C; Fig. 2 [1] - - 100 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - - 130 W
T
j
junction temperature -55 - 175 °C
Static characteristics
V
GS
= 10 V; I
D
= 15 A; T
j
= 100 °C;
Fig. 12
- - 8.3 R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
Fig. 13
- 3.6 4
NXP Semiconductors
PSMN4R0-60YS
N-channel LFPAK 60 V, 4.0 mΩ standard level FET
PSMN4R0-60YS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 14 May 2015 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
Dynamic characteristics
Q
GD
gate-drain charge - 11.2 - nC
Q
G(tot)
total gate charge
V
GS
= 10 V; I
D
= 75 A; V
DS
= 30 V;
Fig. 14; Fig. 15
- 56 - nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A;
V
sup
≤ 60 V; R
GS
= 50 Ω; unclamped
- - 170 mJ
[1] Continuous current is limited by package.
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 S source
2 S source
3 S source
4 G gate
mb D mounting base; connected to
drain
mb
1 2 3 4
LFPAK56; Power-
SO8 (SOT669)
S
D
G
mbb076
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN4R0-60YS LFPAK56;
Power-SO8
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
SOT669
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 60 V
V
DGR
drain-gate voltage T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
= 20 kΩ - 60 V
V
GS
gate-source voltage -20 20 V
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - 130 W
I
D
drain current T
mb
= 100 °C; Fig. 2 - 74 A

PSMN4R0-60YS,115

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET 60V N-Channel LFPAK Standard Level FET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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