1
Features
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Software Protected Programming
Fast Read Access Time - 120 ns
Low Power Dissipation
15mAActiveCurrent
40 µA CMOS Standby Current
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (128 Bytes/Sector)
Internal Address and Data Latches for 128 Bytes
Two 8K Bytes Boot Blocks with Lockout
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Description
The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable
Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072
words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM
technology, the device offers access times to 120 ns, and a low 54 mW power
dissipation. When the device is deselected, the CMOS standby current is less than 40
µA. The device endurance is such that any sector can typically be written to in excess
1-megabit
(128K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT29BV010A
Rev. 0519D–FLASH–05/02
PLCC
Top View
Pin Configurations
Pin Name Function
A0 - A16 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A12
A15
A16
NC
VCC
WE
NC
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
2
AT29BV010A
0519DFLASH05/02
of 10,000 times. The programming algorithm is compatible with other devices in Atmels
Low Voltage Flash family of products.
To allow for simple in-system reprogrammability, the AT29BV010A does not require
high input voltages for programming. The device can be operated with a single 2.7V to
3.6V supply. Reading data out of the device is similar to reading from an EPROM.
Reprogramming the AT29BV010A is performed on a sector basis; 128 bytes of data are
loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 128 bytes of data are captured at
microprocessor speed and internally latched, freeing the address and data bus for other
operations. Following the initiation of a program cycle, the device will automatically
erase the sector and then program the latched data using an internal control timer. The
end of a program cycle can be detected by DATA
polling of I/O7. Once the end of a pro-
gram cycle has been detected, a new access for a read or program can begin.
Block Diagram
Device Operation
READ: The AT29BV010A is accessed like an EPROM. When CE and OE are low and
WE
is high, the data stored at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high impedance state whenever CE
or OE is high. This dual-line control gives designers flexibility in preventing bus
contention.
SOFTWARE DATA PROTECTION PROGRAMMING: The AT29BV010A has 1024
individual sectors, each 128 bytes. Using the software data protection feature, byte
loads are used to enter the 128 bytes of a sector to be programmed. The AT29BV010A
can only be programmed or reprogrammed using the software data protection feature.
The device is programmed on a sector basis. If a byte of data within the sector is to be
changed, data for the entire 128-byte sector must be loaded into the device. The data in
any byte that is not loaded during the programming of its sector will be indeterminate.
The AT29BV010A automatically does a sector erase prior to loading the data into the
sector. An erase command is not required.
Software data protection protects the device from inadvertent programming. A series of
three program commands to specific addresses with specific data must be presented to
the device before programming may occur. The same three program commands must
begin each program operation. All software program commands must obey the sector
program timing specifications. Power transitions will not reset the software data protec-
tion feature; however, the software feature will guard against inadvertent program cycles
during power transitions.
3
AT29BV010A
0519DFLASH05/02
Any attempt to write to the device without the 3-byte command sequence will start the
internal write timers. No data will be written to the device; however, for the duration of
t
WC
, a read operation will effectively be a polling operation.
After the software data protections 3-byte command code is given, a byte load is per-
formed by applying a low pulse on the WE
or CE input with CE or WE low (respectively)
and OE
high. The address is latched on the falling edge of CE or WE, whichever occurs
last. The data is latched by the first rising edge of CE
or WE.
The 128 bytes of data must be loaded into each sector. Any byte that is not loaded dur-
ing the programming of its sector will be indeterminate. Once the bytes of a sector are
loaded into the device, they are simultaneously programmed during the internal pro-
gramming period. After the first data byte has been loaded into the device, successive
bytes are entered in the same manner. Each new byte to be programmed must have its
high to low transition on WE
(or CE) within 150 µs of the low to high transition of WE (or
CE
) of the preceding byte. If a high to low transition is not detected within 150 µs of the
last low to high transition, the load period will end and the internal programming period
will start. A7 to A16 specify the sector address. The sector address must be valid during
each high to low transition of WE
(or CE). A0 to A6 specify the byte address within the
sector. The bytes may be loaded in any order; sequential loading is not required.
HARDWARE DATA PROTECTION: Hardware features protect against inadvertent
programs to the AT29BV010A in the following ways: (a) V
CC
sense if V
CC
is below
2.0V (typical), the program function is inhibited; (b) V
CC
power on delay once V
CC
has
reached the V
CC
sense level, the device will automatically time out 10 ms (typical)
before programming; (c) Program inhibit holding any one of OE
low, CE high or WE
high inhibits program cycles; and (d) Noise filter pulses of less than 15 ns (typical) on
the WE
or CE inputs will not initiate a program cycle.
INPUT LEVELS: While operating with a 2.7V to 3.6V power supply, the address inputs
and control inputs (OE
,CEand WE) may be driven from 0 to 5.5V without adversely
affecting the operation of the device. The I/O lines can only be driven from 0 to V
CC
+
0.6V.
PRODUCT IDENTIFICATION: The product identification mode identifies the device
and manufacturer as Atmel. It may be accessed by hardware or software operation. The
hardware operation mode can be used by an external programmer to identify the correct
programming algorithm for the Atmel product. In addition, users may wish to use the
software product identification mode to identify the part (i.e., using the device code), and
have the system software use the appropriate sector size for program operations. In this
manner, the user can have a common board design for 256K to 4-megabit densities
and, with each densitys sector size in a memory map, have the system software apply
the appropriate sector size.
For details, see Operating Modes (for hardware operation) or Software Product Identifi-
cation. The manufacturer and device code is the same for both methods of identification.
DATA
POLLING: The AT29BV010A features DATA polling to indicate the end of a
program cycle. During a program cycle an attempted read of the last byte loaded will
result in the complement of the loaded data on I/O7. Once the program cycle has been
completed, true data is valid on all outputs and the next cycle may begin. DATA
polling
may begin at any time during the program cycle.
TOGGLE BIT: In addition to DATA
polling the AT29BV010A provides another method
for determining the end of a program or erase cycle. During a program or erase opera-
tion, successive attempts to read data from the device will result in I/O6 toggling
between one and zero. Once the program cycle has completed, I/O6 will stop toggling

AT29BV010A-12TI

Mfr. #:
Manufacturer:
Microchip Technology / Atmel
Description:
NOR Flash 1M (128K X 8) 2.7V- 120NS IND TEMP
Lifecycle:
New from this manufacturer.
Delivery:
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