Characteristics STPS40170C-Y
4/7 Doc ID 17960 Rev 1
Figure 11. Thermal resistance junction to ambient versus copper surface under tab
Figure 7. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 8. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
I
R
(µA)
T
j
=150°C
T
j
=125°C
T
j
=25°C
T
j
=100°C
T
j
=75°C
T
j
=50°C
V
R
(V)
10
100
1000
1 10 100 1000
C(pF)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
V
R
(V)
Figure 9. Forward voltage drop versus
forward current
(per diode, low level)
Figure 10. Forward voltage drop versus
forward current
(per diode, high level)
I
FM
(A)
V
FM
(V)
0
2
4
6
8
10
12
14
16
18
20
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Tj=25°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=125°C
(Typical values)
I
FM
(A)
1
10
100
1000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Tj=25°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=125°C
(Typical values)
V
FM
(V)
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35 40
R
th(j-a)
(°C/W)
D²PAK
S
CU
(cm²)
epoxy printed board, FR4, Cu = 35 µm
