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SQJ459EP-T1_GE3

P1-P3P4-P6P7-P9P10-P11
SQJ459EP
www.vishay.com
Vishay Siliconix
S15-2327-Rev. A, 05-Oct-15
1
Document Number: 66963
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• 100 % R
g
and UIS tested
• AEC-Q101 qualified
c
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
d. See solder profile (
www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
V
DS
(V) -60
R
DS(on)
(Ω) at V
GS
= -10 V 0.018
R
DS(on)
(Ω) at V
GS
= -4.5 V 0.024
I
D
(A) -52
Configuration Single
Package PowerPAK SO-8L
PowerPAK
®
SO-8L Single
2
S
3
S
4
G
1
S
D
Bottom View
1
6.15 mm
5.13 mm
Top View
S
G
D
P-Channel MOSFET
ABSOLUE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
-52
A
T
C
= 125 °C -30
Continuous Source Current (Diode Conduction) I
S
-75
Pulsed Drain Current
a
I
DM
-200
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
-40
Single Pulse Avalanche Energy E
AS
80 mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
83
W
T
C
= 125 °C 27
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
b
R
thJA
65
°C/W
Junction-to-Case (Drain) R
thJC
1.8
SQJ459EP
www.vishay.com
Vishay Siliconix
S15-2327-Rev. A, 05-Oct-15
2
Document Number: 66963
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= -250 μA -60 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1.5 -2.0 -2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= -60 V - - -1
μA V
GS
= 0 V V
DS
= -60 V, T
J
= 125 °C - - -50
V
GS
= 0 V V
DS
= -60 V, T
J
= 175 °C - - -150
On-State Drain Current
a
I
D(on)
V
GS
= -10 V V
DS
≤ −5 V -30 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V I
D
= -3.5 A - 0.0155 0.0180
Ω
V
GS
= -4.5 V I
D
= -3.1 A - 0.0206 0.0240
V
GS
= -10 V I
D
= -3.5 A, T
J
= 125 °C - 0.0255 -
V
GS
= -10 V I
D
= -3.5 A, T
J
= 175 °C - 0.0310 -
Forward Transconductance
b
g
fs
V
DS
= -30 V, I
D
= -15 A - 40 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= -30 V, f = 1 MHz
- 3448 4586
pF Output Capacitance C
oss
- 374 497
Reverse Transfer Capacitance C
rss
- 234 312
Total Gate Charge
c
Q
g
V
GS
= -10 V V
DS
= -40 V, I
D
= -15 A
-73108
nC Gate-Source Charge
c
Q
gs
-10-
Gate-Drain Charge
c
Q
gd
-20-
Gate Resistance R
g
f = 1 MHz 0.5 1.1 2 Ω
Turn-On Delay Time
c
t
d(on)
V
DD
= -30 V, R
L
= 30 Ω
I
D
≅ -1 A, V
GEN
= -10 V, R
g
= 6 Ω
-1217
ns
Rise Time
c
t
r
-1926
Turn-Off Delay Time
c
t
d(off)
-88117
Fall Time
c
t
f
-4560
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
---200A
Forward Voltage V
SD
I
F
= -2.5 A, V
GS
= 0 - -0.8 -1.2 V
SQJ459EP
www.vishay.com
Vishay Siliconix
S15-2327-Rev. A, 05-Oct-15
3
Document Number: 66963
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
0
12
24
36
48
60
03691215
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
V
GS
= 2 V
0
12
24
36
48
60
0246810
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0
15
30
45
60
75
0 5 10 15 20 25
g
fs
-Transconductance (S )
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
1000
2000
3000
4000
5000
6000
0 15304560
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0
2
4
6
8
10
012345
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0.00
0.01
0.02
0.03
0.04
0.05
0 1224364860
R
DS(on)
-On-Resistance (Ω)
I
D
-Drain Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
P1-P3P4-P6P7-P9P10-P11

SQJ459EP-T1_GE3

Mfr. #:
Buy SQJ459EP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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